2N4870 - New Jersey Semiconductor

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^zmi-donauctoi Lpioducti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N4870 (SILICON)
2N4871
PN unijunction transistors designed for use in pulse
and t i m i n g circuits, sensing circuits and thyristor trigger circuits.
\'
(10-92)
Bl
MAXIMUM RATINGS <TA = 25*C unless otherwise noted)
Rating
Symbol
Value
Unit
V
300
mW
'•
50
mA
1.5
Amp
30
Volts
35
Volts
-65 to +125
•c
°c
RMS Power Dissipation*
RMS Emitter Current
Peak-Pulse Emitter Current**
le**
Emitter Reverse Voltage
V B2E
Interbase Voltaget
V B2Blt
Operating Junction Temperature Range
TJ
T .
stg
Storage Temperature Range
Symbol
Characteristic
Min
Typ
Max
0.58
0.70
•
0.75
0.85
4.0
6,0
», 1
o. 10
.
0.90
-
2.5
-
'o2(mnd)
.
15
.
'ei)2O
.
0.005
1.0
'p
.
1.0
5.0
:. o
5.0
7,0
•
4.0
3.0
5.0
9.0
8.0
•
II
I n t r i n s i c Slandoff Ratio*
IV
> 10 V)
D2B1
2N4B70
JN<87,
tnicrbise Resistance
RBB
(vn2B1-3'ov''E-0»
I n t e r m i t Renl.itance Temperature Coefflclvm
I V D . 0 , • 3.0 V. I_ • 0, T. • -85 <o « U 3 ' C )
B*PI
K
" R BD
A
Emitter Salurallon Volllge"
(VU2D."°V'
V
EDII.sal)
'i!- 50 " 1 ^
Mn'lulatrd Interbaaf Current
(v n2Bi
' 10 v' 'E ' 50 mA)
E m i t t e r Reverie Current
'VD2El30V''Bl'°'
Pciik-Point E m i t t e r Current
'VD2Bl'"V)
Vailcy-PoInt Current*'
' v nB2D1
o n i ' 2° V . n83
o. *
-65 to +150
10°
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RISC -One Peak Pulse Voltage
Quality Semi-Conductors
2N.IH70
V
2fJ4B71
2N4U70
ZS4H7I
v
ODI
••
Unit
•
k ohmfi
vc
Volt!
mA
MA
MA
mA
Volli