J ^zmi-donauctoi Lpioducti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4870 (SILICON) 2N4871 PN unijunction transistors designed for use in pulse and t i m i n g circuits, sensing circuits and thyristor trigger circuits. \' (10-92) Bl MAXIMUM RATINGS <TA = 25*C unless otherwise noted) Rating Symbol Value Unit V 300 mW '• 50 mA 1.5 Amp 30 Volts 35 Volts -65 to +125 •c °c RMS Power Dissipation* RMS Emitter Current Peak-Pulse Emitter Current** le** Emitter Reverse Voltage V B2E Interbase Voltaget V B2Blt Operating Junction Temperature Range TJ T . stg Storage Temperature Range Symbol Characteristic Min Typ Max 0.58 0.70 • 0.75 0.85 4.0 6,0 », 1 o. 10 . 0.90 - 2.5 - 'o2(mnd) . 15 . 'ei)2O . 0.005 1.0 'p . 1.0 5.0 :. o 5.0 7,0 • 4.0 3.0 5.0 9.0 8.0 • II I n t r i n s i c Slandoff Ratio* IV > 10 V) D2B1 2N4B70 JN<87, tnicrbise Resistance RBB (vn2B1-3'ov''E-0» I n t e r m i t Renl.itance Temperature Coefflclvm I V D . 0 , • 3.0 V. I_ • 0, T. • -85 <o « U 3 ' C ) B*PI K " R BD A Emitter Salurallon Volllge" (VU2D."°V' V EDII.sal) 'i!- 50 " 1 ^ Mn'lulatrd Interbaaf Current (v n2Bi ' 10 v' 'E ' 50 mA) E m i t t e r Reverie Current 'VD2El30V''Bl'°' Pciik-Point E m i t t e r Current 'VD2Bl'"V) Vailcy-PoInt Current*' ' v nB2D1 o n i ' 2° V . n83 o. * -65 to +150 10° """""I RISC -One Peak Pulse Voltage Quality Semi-Conductors 2N.IH70 V 2fJ4B71 2N4U70 ZS4H7I v ODI •• Unit • k ohmfi vc Volt! mA MA MA mA Volli