^E-ml-donauctoi LPioauati, Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1492 Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -5A • Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@lc= -5A • Complement to Type 2SD2254 PIN 1.BASE 2. COLLECTOR 3.&1ITTER 1 2 TO-3PL package 3 APPLICATIONS • Designed for power amplifier applications. • Optimum for 60W HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VGEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -5 V Collector Current-Continuous -6 A mm Ic ICM Collector Current-Peak -10 Collector Power Dissipation @ TC=25'C 70 W PC Tj Tstg A Collector Power Dissipation @ Ta=25'C 3.5 Junction Temperature 150 Storage Temperature Range -55-150 °c •c DIM A B C D E F G H J K N P Q R U W WIN 25.50 19.80 4.50 0.90 2.80 2.40 10.80 3.10 0.50 20.00 3.90 2.40 3.10 1.90 3.90 2.90 MAX 26.50 20.20 5.50 1.10 3.20 2.60 11.00 3.30 0.70 21.00 4.10 2.60 330 2.10 4.10 3.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon PNP Darlington Power Transistor 2SB1492 ELECTRICAL CHARACTERISTICS TC=25'C unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0 VcE(sat) Collector-Emitter Saturation Voltage lc= -5A; IB= -5mA -2.5 V VsE(sat) Base-Emitter Saturation Voltage lc= -5A; !B= -5mA -3.0 V ICBO Collector Cutoff Current V CB =-130V;I E =0 -100 uA ICEO Collector Cutoff Current V C E=-110V;I B =0 -100 uA IEBO Emitter Cutoff Current VEB= -5V; lc= 0 -100 uA hpE-1 DC Current Gain lc=-1A;VCE=-5V 2000 hpE-2 DC Current Gain lc= -5A; VCE= -5V 5000 Current-Gain — Bandwidth Product lc=-0.5A; VCE=-10V fi CONDITIONS MIN TYP. MAX UNIT V -110 30000 20 MHz 0.9 us 2.5 us 1.7 us Switching Times ton Turn-on Time *stg Storage Time Fall Time tf hFE.2 Classifications Q P 5000-15000 8000-30000 lc= -5A; lai= -Is2= -5mA, Vcc= -50V,