'J , Unc. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA2140 DESCRIPTION 1 • Collector-Emitter Breakdown Voltage:V(BR)CEo=-180V(Min) • Good Linearity of hFE ppf i 2 < PIN 1.BASE 2. COLLECTOR i APPLICATIONS 3. EMITTER TO-220F package 1 2 3 • Designed for power amplification and for TV VM circuit. ,c » -a- H * : * .• • B ABSOLUTE MAXIMUM RATINGS(Ta=25°C) F SYMBOL VCBO PARAMETER Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT -180 V -180 V -6 V -1.5 A A t. •-* O '"""' O Q ! O U ,": H O V__.' -.» ', L 4 -•• i : I ' ''•' I ' i A I _ • -R'- 1 K - -o - N- J -- mm Ic Collector Current-Continuous ICP Collector Current-Peak -3 Collector Power Dissipation @Ta=25"C 2 Collector Power Dissipation @TC=25BC 20 Tj Junction Temperature 150 r Tstg Storage Temperature -55-150 •c W PC DIM MIN A 14.95 B 10.00 C 4,40 D 0.75 3.10 F 3.70 H J 0.50 K 13.4 1.10 L N 5.00 q 2.70 R 2.20 2.65 S 6.40 U MAX 15.05 10.10 4.60 0.80 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 2.85 6.60 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors 2SA2140 Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25'C unless otherwise specified PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage lc=-10mA;l B =0 VcE(sat) Collector-Emitter Saturation Voltage I C =-1A;I B =-0.1A -0.5 V ICBO Collector Cutoff Current V C B=-180V;I E =0 -100 wA IEBO Emitter Cutoff Current VEB= -6V; lc= 0 -100 uA hFE DC Current Gain lc=-1A;V C E=-5V COB Collector Output Capacitance l E =0;V C B=-lOV;f=1MHz 30 PF Current-Gain— Bandwidth Product lc= -0.2A; VCE= -10V; f= 10MHz 100 MHz 0.1 us 1.0 ws 0.1 us fr CONDITIONS MIN TYP. SYMBOL MAX -180 UNIT V 60 240 Switching Times ton Turn-on Time Utg Storage Time tf • lc= -0.4A,VCC= 100V IB1= -lB2= -0.04A Fall Time hFE Classifications Q P 60-140 120-240