2N1613 2N1711 2N1893 NPN Silicon Transistor JEDEC TO

rm.
20 STERN AVE.
SPRINGFIELD. NEW JERSEY 07081
U.SA
DESCRIPTION
2N1613
2N1711
2N1893
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-6960
NPN Silicon Transistor
JEDEC TO-39 case
2N1613, 2N1711, and 2N1893 are S i l i c o n NPN Planar Epitaxial
Transistors designed for small signal general purpose and switching applications.
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
2N1613
2N17H
2N18_93
Collector-Base Voltage
75
75
VCBO
120
Vdc
Collector-Emitter Voltage
VCEO
80
Vdc
Collector-Emitter Voltage
VCER
50
50
100
Vdc
Emitter-Base Voltage
7.0
VEBO
7.0
7.0
Vdc
Collector Current-Continuous
•
c
mAdc
Power Dissipation
§°§
PT
watts
Power Dissipation, TC=25°C
PT
watts
3'°
Operating and Storage
Tj,Tstg
-65 to +200°C
Junction Temperature
ELECTRICAL CHARACTER 1ST I r.$ (TA=25°C)
2N1613
2N1893
2N1711
Test Conditions
Mrn^ Max
Min Max
Min Max
Unit
VCB=60V
10
10
nA
VCB=90V
10
nA
VEB=5.0V
10
10
5
nA
IC=100uA
75
75
120
V
IC=10mA
80
V
IC=10mA, RBE=10 OHMS
50
50
100
V
lE=100uA
7-0
7.0
7.0
V
IC=50mA, !B=5mA
V
1.2
lC=150mA, IB=15mA
1.5
5.0
V
1.5
IC*50mA, lB=5mA
V
0.9
IC^lSOmA, I 8=15mA
_
1.3
V
1.3
1.3
VCE='OV, lc=10uA
20
_
VCE=IOV, ic
20
20
35
35
75
35
kQ 120
100 300
**0 120
VCE=IOV, Ic-500mA
20
ko
—
VCE=IOV, 50mA, f-20 MHz
60
70
50
MHz
VCB'IOV, f=100 KHz
25
25
15
P'
VBE=0.5- , f=100 KHz
30
80
85
P^
IC=300uA, f-1.0 KHz
12
8.0
dB
N.I Semi-Conductors reserves the right to change lest conditions, parameter limits and package dimensions without notice.
Information furnished by NJ Semi-Conductors is believed to be hoth accurate and reliable at the time of going to press However NJ
Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages
customer'; to vcrifv that datasheets are current before placing orders.