rm. 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U.SA DESCRIPTION 2N1613 2N1711 2N1893 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-6960 NPN Silicon Transistor JEDEC TO-39 case 2N1613, 2N1711, and 2N1893 are S i l i c o n NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) 2N1613 2N17H 2N18_93 Collector-Base Voltage 75 75 VCBO 120 Vdc Collector-Emitter Voltage VCEO 80 Vdc Collector-Emitter Voltage VCER 50 50 100 Vdc Emitter-Base Voltage 7.0 VEBO 7.0 7.0 Vdc Collector Current-Continuous • c mAdc Power Dissipation §°§ PT watts Power Dissipation, TC=25°C PT watts 3'° Operating and Storage Tj,Tstg -65 to +200°C Junction Temperature ELECTRICAL CHARACTER 1ST I r.$ (TA=25°C) 2N1613 2N1893 2N1711 Test Conditions Mrn^ Max Min Max Min Max Unit VCB=60V 10 10 nA VCB=90V 10 nA VEB=5.0V 10 10 5 nA IC=100uA 75 75 120 V IC=10mA 80 V IC=10mA, RBE=10 OHMS 50 50 100 V lE=100uA 7-0 7.0 7.0 V IC=50mA, !B=5mA V 1.2 lC=150mA, IB=15mA 1.5 5.0 V 1.5 IC*50mA, lB=5mA V 0.9 IC^lSOmA, I 8=15mA _ 1.3 V 1.3 1.3 VCE='OV, lc=10uA 20 _ VCE=IOV, ic 20 20 35 35 75 35 kQ 120 100 300 **0 120 VCE=IOV, Ic-500mA 20 ko — VCE=IOV, 50mA, f-20 MHz 60 70 50 MHz VCB'IOV, f=100 KHz 25 25 15 P' VBE=0.5- , f=100 KHz 30 80 85 P^ IC=300uA, f-1.0 KHz 12 8.0 dB N.I Semi-Conductors reserves the right to change lest conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be hoth accurate and reliable at the time of going to press However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customer'; to vcrifv that datasheets are current before placing orders.