!j£Ti£iy ^zmi-Conductoi Lpioducti, dna. tx ^j 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SC1470 SILICON NPN POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VcEO(SUS) Collector-Emitter Voltage 450 V Emitter-Base Voltage 6 V Ic Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 10 A IBM Base Current-Peak 20 A PC Collector Power Dissipation@Tc=25°C 250 W Tj Junction Temperature 200 "C Tstg Storage Temperature -65-200 °C VEBO 1 M3S Iran MM 39 00 9.30 11.10 •a .S3 1350 1? { THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance.Junction to Case 0.7 •c/w _4, ~ZL 450 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors ELECTRICAL CHARACTERISTICS TC=25'C unless otherwise specified SYMBOL PARAMETER VcEO(SUS) Collector-Emitter Sustaining Voltage lc=100mA;lB=0 VcE(sat)-i Collector-Emitter Saturation Voltage lc= 10A; IB= 1A 2.5 V vCE(sat)-2 Collector-Emitter Saturation Voltage lc=15A; IB=1.5A | C =15A; IB=1.5A,TC=100'C 3.0 3.0 V Base-Emitter Saturation Voltage lc=15A; IB=1.5A lc=15A; IB=1.5A,TC=100'C 1.5 1.5 V ICEV Collector Cutoff Current VcEv=850V;VBE(0ff)=1 .5V VCEv=850V;VBE(0ff)=1 .5V;TC=1 OO'C 0.25 1.5 mA ICER Collector Cutoff Current VCE= 850V; RBE= 50 fl ,TC= 100"C 2.5 mA IEBO Emitter Cutoff Current VEB= 6V; lc=0 1.0 mA hpE DC Current Gain lc= 20A ; VCE= 5V COB Output Capacitance l E =0;VcB=10V;ftest=1.0kHz 500 PF 20 50 ns VBE(sat) CONDITIONS MIN TYP. MAX 450 UNIT V 7 Switching times;Resistive Load td Delay Time tr Rise Time lc= 15A , Vcc= 250V, RB2= 1 .6 Q 200 500 ns ts Storage Time Duty Cycle sS2.0% 900 2200 ns tf Fall Time 100 250 ns