NJSEMI 2SC1470

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC1470
SILICON NPN POWER TRANSISTOR
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
850
V
VcEO(SUS)
Collector-Emitter Voltage
450
V
Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
10
A
IBM
Base Current-Peak
20
A
PC
Collector Power Dissipation@Tc=25°C
250
W
Tj
Junction Temperature
200
"C
Tstg
Storage Temperature
-65-200
°C
VEBO
1
M3S
Iran
MM
39 00
9.30
11.10
•a .S3
1350
1? {
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance.Junction to Case
0.7
•c/w
_4,
~ZL
450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
VcEO(SUS)
Collector-Emitter Sustaining Voltage
lc=100mA;lB=0
VcE(sat)-i
Collector-Emitter Saturation Voltage
lc= 10A; IB= 1A
2.5
V
vCE(sat)-2
Collector-Emitter Saturation Voltage
lc=15A; IB=1.5A
| C =15A; IB=1.5A,TC=100'C
3.0
3.0
V
Base-Emitter Saturation Voltage
lc=15A; IB=1.5A
lc=15A; IB=1.5A,TC=100'C
1.5
1.5
V
ICEV
Collector Cutoff Current
VcEv=850V;VBE(0ff)=1 .5V
VCEv=850V;VBE(0ff)=1 .5V;TC=1 OO'C
0.25
1.5
mA
ICER
Collector Cutoff Current
VCE= 850V; RBE= 50 fl ,TC= 100"C
2.5
mA
IEBO
Emitter Cutoff Current
VEB= 6V; lc=0
1.0
mA
hpE
DC Current Gain
lc= 20A ; VCE= 5V
COB
Output Capacitance
l E =0;VcB=10V;ftest=1.0kHz
500
PF
20
50
ns
VBE(sat)
CONDITIONS
MIN
TYP.
MAX
450
UNIT
V
7
Switching times;Resistive Load
td
Delay Time
tr
Rise Time
lc= 15A , Vcc= 250V, RB2= 1 .6 Q
200
500
ns
ts
Storage Time
Duty Cycle sS2.0%
900
2200
ns
tf
Fall Time
100
250
ns