Databook.fxp 1/13/99 2:09 PM Page B-35 B-35 01/99 IF3602 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings = TA at 25¡C Reverse Gate Source Voltage & Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25°C free air temperature: IF3602 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) IGSS VGS(OFF) IDSS Dynamic Electrical Characteristics Max – 20 – 0.35 30 – 0.5 –3 – 20 V 10 mA 300 mW 4 mW/°C – 65°C to 200°C Process NJ3600L Unit Test Conditions V IG = – 1 µA, VDS = ØV nA V mA VGS = – 10V, VDS = ØV VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = ØV Typ Common Source Forward Transconductance gfs 750 mS VDS = 10V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 300 pF VDS = ØV, VGS = – 4V f = 1 MHz Common Source Reverse Transfer Capacitance Crss 200 pF VDS = ØV, VGS = – 4V f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N 0.3 nV/√Hz VDG = 3V, ID = 5 mA f = 100 Hz mV VDS = 10V, VGS = ØV Max Differential Gate Source Voltage | VGS1 – VGS2 | 100 TOÐ78 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Omitted, 5 Source, 6 Drain, 7 Gate, 8 Omitted www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375