<£e.mi-Con.aiLckoi ^Pi , fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5452-2N5454 Dual N-Channel JFET General Purpose Amplifier GENERAL DESCRIPTION FEATURES Matched FET pairs lor differential amplifiers. This family of general purpose FETs Is characterized for low and medium frequency differential amplifier applications requiring low drift and low offset voltage. • Low Olfset Voltage • Low Drift PIN CONFIGURATION • Low Capacitance • Low Output Conductance ABSOLUTE MAXIMUM RATINGS (TA-26°C unless otherwise noted) Gate-Source or Gate Drain Voltage (Note 1) -50V Gate Current (Note 1) 60mA Storage Temperature Range -65'C to + ZOO'C Operating Temperature Range - SS'C to +150'C Lead Temperature (Soldering, 10aec) -I- 300'C One Side Both Sides Power Dissipation (Tc - 85'C) .. 250mW 500mW Derate above 25'C 2.9mW/'C 4.3mW/°C TO-71 ,,-MM \l 0, NOTE: Satttei stxvf those I/sled under "Absolute Mm/mum Ratings" may cause permanent damage to the device. These are stress ratings only and functional off/alien of uie device it these er any other eonditimf ibovethoielridhatedhtheapeistJonaliectcniotlliespecttlcetlaratanat Implied. Exposure to absolute iroMnum fating mndXcns lor extendedperiods may affect device retlau/ltf. ' 6037 ORDERING INFORMATION ELECTRICAL CHARACTERISTICS Symbol Param*tir (TA-250C unless otherwise specified) Taat Condition! 2N64S2 Mln loss Vas«--30V.VDS=0 Gate Havana Currant TA=160°C BVass Cote-Source Breakdown Voltage Vrj8-0,l8=-1|»A VescoH) Gate-Source Cutoff Voltaga Vus=20V, !D-lnA Vas Gate-Source Voltage VD3-20V, lo^SOjiA VGSIO Gate-Source Forward Voltage Vos-o.ia=imA less Saturation Drain Current VDS-MV.VQS-O Max 2NK453 Max Mln 2N6454 Mm Max Unite -100 -100 -100^ pA -200 _200 -200 nA V -60 -50 -SO -1 -4.E -1 -4.5 -1 -4.5 -0.2 -« -0.2 -4.2 -0.2 -4.2 0.6 5.0 0.5 5.0 0,6 5.0 2 2 2 mA NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However MJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N J Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors 2N5452-2N5454 ELECTRICAL CHARACTERISTICS Tut Cm iWoffl Symbol a* So, (Continued) 0^=25*0 unless Otherwise specified) Common-Source Forward Tianrondiirtinc. |(Notl)2) VDS-HW, Vas-o Common-Source Output f=1kHl 1000 3000 1000 1000 1000 f^tKHz Vos=20V, 10-200^ Cto Common-Source Input Capacitance (Note 2) VDS-ZOV,VQS-O Cm, Common-Source Reverse Traratar Capacitance (Note 2) Cdgo Drain-Gate Capacitance (Note 2) Vtxj=10V.ls-=0 «n Equivalent Short Circuit Input Noise Voltage V08-wv.vas=o f»1kHl NF Common-Source Spot Note* Figure (NoM 2) V6s=»V.Vas-0 Ro=10MO f=ioom IDSSI/IDSSZ Drain Saturation Currant Ratio VDS=20V.V88-0 IVOSI-VQSJ! Differential Qate-Source Voltage Vcs-20V.b-200uA AlVosi-Vaszl Qate-Sourc* Voltage DHt«rantlal Change AT with Temperature ftnrfliMll Trareconductance Ratio Differential Output Conductance NOTES: 1. P»r trarnljlor. 2. FOf design reference only, not 100« leated. 2NI 453 f-1MHl T-aPcto^es'C T-aircto 0.97 Unite 3000 1000 3,0 3.0 1.0 1,0 1.0 4.0 4.0 4.0 Pa 1.2 1.2 i.a 1.5 1.6 1.S 20 20 20 nV 35 0.5 dB 1.0 0.5 0.95 1.0 0.8S 10.0 16.0 0.4 0.8 2.C 1.0 0.25 1.0 0.97 1.0 0.2S 2.5 0.95 PF 1.0 S.O 0.5 -H26-C 1-1 KH* 3000 1000 3.0 05 0,95 2N« 4S4 Mln MM Mtn Max f- 100MHz Conductance 9«1/8ti2 2NI 4S2 Mln Mot mV 1.0 0.26 cs