LSK489 en = 1.8nV√Hz, Ciss = 4pF, MONOLITHIC DUAL N-CHANNEL JFET Description: The LSK 489 high performance monolithic dual JFETs features extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. LSK489 removes significant cost for test screening time needed to match IDSS on 2 individual JFETS and offers ZERO yield loss. LSK489 On-Chip IDSS matching gives closest possible synchronous electrical performance and also offers better matched performance when the chip is subjected to temperature. Availability: LSK489 – TO-71 hermetic package LSK489 – SOIC-A LSK489 – SOT-23, 6 lead LSK489 – BARE DIE Contact Micross for full package dimensions 1 ABSOLUTE MAXIMUM RATING @ 25°C (unless otherwise stated) Features: Reduced Noise due to process improvement Monolithic Design High slew rate & high CMRR 102dB Low offset/drift voltage Low gate leakage IGSS & IG Benefits: Tight differential match vs. current Improved op amp speed settling time accuracy Minimum Input Error trimming error voltage Lower intermodulation distortion Applications: Wide band differential Amps High speed temperature compensated single ended input amplifiers High speed comparators Impedance convertors High-Speed Driver Pinout: Storage Temperature -55 to +150°C Junction Operating Temperature -55 to +150°C MAXIMUM RATINGS LIMIT MAXIMUM RATINGS LIMIT UNIT 4 Continuous Power Dissipation, per side SD210DE 300mW SD214DE 5 Power Dissipation, total 500mW Gate-Drain, Gate-Source ±40V ±40V Drain Current 50 mA GateVoltage Forward Current IG(F) = 10mA Gate to Source Voltage VGSO = 60V Gate-Substrate Voltage ±30V ±30V Lead Temperature 300 °C Gate to Drain Voltage VGDO = 60V Drain-Source Voltage 30V 20V Storage Temperature -65 to 150 °C Source-Drain Voltage 10V 20V Operating Junction -55 to 125 °C Temperature MATCHING CHARACTERISTICS, TA = 25°C unless otherwise noted Drain -Substrate Voltage 30V 25V Dissipation 300 CONDITIONS mW CHARACTERISTIC SYMBOL MIN TYP Power MAX UNITS Source-Substrate Voltage 15V 25V DIFFERENTIAL GATE TO SOURCE CUTOFF |VGS1 - VGS2| 20 mV VDS = 10V, ID = 1mA VOLTAGE ELECTRICAL GATE TO SOURCESPECIFICATION SATURATION CURRENT RATIO IDSS1 0.9 1.0 VDS = 10V, VGS = 0V LIMITS IDSS2 PARAMETER SYMB TEST CONDITIONS TYP UNIT SD214DE COMMON MODE REJECTION RATIO CMRR 95 102 dBSD210DEVDG = 10V to 20V, ID = 200µA OL MIN MAX MIN MAX - I = 10µA 1.8 2.035 VDS = 15V, ID = 2mA, f = 1kHz DRAIN-SOURCE BREAKDOWN V(BR)DS VGS = VBS = 0V, 30 D NOISE VOLTAGE e nV / √Hz NBW = 1Hz n VOLTAGE VGS = VBS = -5V, ID = 10nA 30 10 20 2.8 3.5 VDS = 15V, ID = 2mA, f = 10Hz SOURCE-DRAIN BREAKDOWN V(BR)SD VGD = VBD = -5V, IS = 10nA 22 10 20NBW = 1Hz VOLTAGE V COMMON SOURCE INPUT CAPACITANCE CISS 4 8 DRAIN-SUBSTRATE V(BR)DBO V = 0V, ID = 10nA 35 25I = 500µA, f = 1MHz pF15 VDS = 15V, COMMON SOURCE REVERSE TRANSFER CRSSGB 3 D BREAKDOWN VOLTAGE Source Open CAPACITANCE SOURCE-SUBSTRATE V(BR)SBO VGB = 0V, IS = 10µA 35 15 25 ELECTRICAL CHARACTERISTICS @ 25°C unless otherwise noted Drain Open BREAKDOWN VOLTAGE CHARACTERISTIC DRAIN-SOURCE LEAKAGE IDS(off) GATE TO SOURCE BREAKDOWN VOLTAGE SOURCE-DRAIN LEAKAGEVOLTAGE ISD(off) GATE TO GATE BREAKDWON GATE TO SOURCE PINCH-OFF VOLTAGE LEAKAGE IGBS GATEGATE TO SOURCE OPERATING VOLTAGE DRAIN TO SOURCEVOLTAGE SATURATION CURRENT THRESHOLD VGS(th) GATE OPERATING CURRENT CONDITIONS VSYMBOL = 10V MAX 0.4 UNITS 10 GS = VBS = -5VMIN VDS TYP BVGSS -60 VDS =- 20V - 0.9 V VDS = 0, ID10 = -1nA nA V(BR) = V = -5V V = 10V 0.5 10 V ±30 ±45 V I = ±1µA, I = I = 0 A (Open Circuit) GD G1 – G2 BD SD G D S VGS (OFF) -1.5 VSD =- 20V -3.50.8 V VDS = 15V, 10 ID = 1nA VDB 0.001 0.1 VDS = 15V, I0.1 V , VGB = ±4 -0V VGS= VSB = 0V-0.5 -3.5 V D = 500µA 2 IDSS 2.5 VSB =5 0V 150.8 mA V0.1 VGS = 0 VDS = VGS , ID = 1µA, 0.5 1.5 DG = 15V,1.5 IG -2558 pA = 200µA VGS -2 = 5V 70 VDG = 15V, ID70 - VGS-0.8 nA = 10V -1038 45 45 TA = 25°C GATE TO SOURCE LEAKAGE CURRENT pA VDG = -15V, VDS = 0V Ω DRAIN-SOURCE-ON RDS(on) VSB =IGSS 0V, ID = 1mA- VGS =- 15V -10030 RESISTANCE FULL CONDUCTION TRANSCONDUCTANCE Gfs 1500 VGS =- 20V - 26 VDG = -15V, VGS = 0, f = 1kHz µS TRANSCONDUCTANCE 1000 VGS1500 - 24 VDG = 15V, ID = 500µA = 25V FULLDYNAMIC OUTPUT CONDUCTANCE GOS 35 VDG = 15V, VGS = 0V FORWARD OUTPUT CONDUCTANCE 0.2 2 VDG = 15V, ID = 200µA TRANSCONDUCTANCE NOISE FIGURE NF 0.5 dB VDS = 15V, VGS = 0V, RG = 10MΩ SD210DE / SD214DE - Bare die and wafer form, contact f = 100Hz, NBW = 6Hz Micross forMaximum full datasheet andvalues dimensions Note 1 - Absolute Ratings are limiting above which serviceability may be impaired, Note 2 - Pulse width ≤2ms, Note 3 - All MIN/TYP/MAX Limits are absolute values. Negative signs indicate electrical polarity only, Note 4 - Derate 2.4mW/°C above 25°C, Note 5 - Derate 4mW/°C above 25°C Information Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com