RENESAS BCR5PM-12LB

Preliminary Datasheet
BCR5PM-12LB
Triac
R07DS0085EJ0400
(Previous:
REJ03G0460-0300)
Medium Power Use
Rev.4.00
(The product guaranteed maximum junction temperature of 150C)
Jul 27, 2010
Features




 IT (RMS) : 5 A
 VDRM : 600 V
 IFGTI, IRGTI, IRGTIII : 20 mA (10 mA)Note5
Viso : 2000 V
Insulated Type
Planar Type
UL Recognized : File No. E223904
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F )
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
1
2 3
Applications
Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, solenoid driver, small motor control, copying
machine, electric tool, electric heater control, and other general controlling device
Warning
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum
junction temperature of 125°C will be supplied.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
R07DS0085EJ0400 Rev.4.00
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Page 1 of 7
BCR5PM-12LB
Preliminary
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
5
Unit
A
Surge on-state current
ITSM
50
A
I2t
10.4
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
3
0.3
10
2
– 40 to +150
– 40 to +150
2.0
2000
W
W
V
A
C
C
g
V
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 120C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.8
Unit
mA
V
Test conditions
Tj = 150C, VDRM applied
Tc = 25C, ITM = 7 A,
Instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger currentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
20Note5
20Note5
20Note5
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
Rth (j-c)
0.2/0.1
—
—
—
—
4.0
V
C/W
Tj = 125C/150C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
5/1
—
—
V/s
Tj = 125C/150C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2.
3.
4.
5.
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (IGT  10 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 2.5 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0085EJ0400 Rev.4.00
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 7
BCR5PM-12LB
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
1
10
7
5
3
2
Tj = 150°C
0
10
7
5
3
2
–1
Gate Voltage (V)
70
60
50
40
30
20
10
2 3
5 7 10
1
2 3
5 7 10
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
101
7
PG(AV) =
5
0.3W
3 VGT = 1.5V
2
PGM = 3W
IGM = 2A
0
IGT = 20mA
10–1
VGD = 0.1V
7
5 1
2
10 2 3 5 710 2 3 5 7103 2 3 5 7104
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
80
On-State Voltage (V)
5
3
2 VGM = 10V
10
7
5
3
2
90
0 0
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
10
Tj = 25°C
Surge On-State Current (A)
100
103
7
5
Typical Example
IRGT III
3
2
102
7
5
2
IRGT I
IFGT I
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
Typical Example
3
2
102
7
5
3
2
1
10
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
R07DS0085EJ0400 Rev.4.00
Transient Thermal Impedance (°C/W)
On-State Current (A)
2
10
7
5
3
2
102 2 3 5 7103 2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0 –1
0
1
2
10 2 3 5 710 2 3 5 710 2 3 5 710
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR5PM-12LB
Preliminary
10
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1 1
10
On-State Power Dissipation (W)
No Fins
9
8
7
6
5
4
3
2
1
1
2
3
4
5
6
7
8
9 10
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
Curves apply regardless
of conduction angle
140
120
100
80
60
40
360° Conduction
20 Resistive,
160
1
2
3
120 × 120 × t2.3
140
100 × 100 × t2.3
120
60 × 60 × t2.3
100
80
All fins are black
60 painted aluminum
and greased
40 Curves apply regardless
of conduction angle
20 Resistive, inductive loads
inductive loads
0
0
Natural convection
4
5
6
7
0
0
8
1
2
3
4
5
6
7
8
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
R07DS0085EJ0400 Rev.4.00
3.0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
RMS On-State Current (A)
160
Ambient Temperature (°C)
360° Conduction
Resistive,
inductive loads
0
0
10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105
160
Case Temperature (°C)
Maximum On-State Power Dissipation
3
Ambient Temperature (°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
106
7
5
3
2
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
Typical Example
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Page 4 of 7
BCR5PM-12LB
Preliminary
Holding Current vs.
Junction Temperature
Latching Current vs.
Junction Temperature
2
3
VD = 12V
Distribution
3
2
Typical Example
101
7
5
3
2
Latching Current (mA)
Holding Current (mA)
10
7
5
0
T2+, G+
Typical Example
T2–, G–
Distribution
102
7
5
3
2
T2+, G–
Typical Example
1
10
7
5
3
2
10
0
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140 160
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Junction Temperature (°C)
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
60
I Quadrant
40
20
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
160
Typical Example
Tj = 150°C
140
120
100
III Quadrant
80
60
40
I Quadrant
20
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/μs)
R07DS0085EJ0400 Rev.4.00
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
10
–60 –40–20 0 20 40 60 80 100 120 140 160
10
7
5
3
2
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
I Quadrant
3 Minimum
Characteristics
2 Value
100
7 0
10
III Quadrant
2 3
5 7 101
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR5PM-12LB
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
1
10
7
5
I Quadrant
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
III Quadrant
3
2
Minimum
Characteristics
Value
100
7 0
10
2 3
5 7 10
1
2 3
5 7 10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Typical Example
IRGT III
3
IRGT I
2
102
7
5
IFGT I
3
2
1
10 0
10
2 3
5 7 101
2 3
5 7 102
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
Recommended Circuit Values Around The Triac
Load
6Ω
6Ω
103
7
5
C1
A
6V
330Ω
V
Test Procedure I
R1
A
6V
V
C0
R0
330Ω
Test Procedure II
C1 = 0.1 to 0.47μF C0 = 0.1μF
R1 = 47 to 100Ω
R0 = 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS0085EJ0400 Rev.4.00
Page 6 of 7
BCR5PM-12LB
Preliminary
Package Dimensions
Package Name
TO-220F
JEITA Package Code
SC-67
Previous Code
⎯
RENESAS Code
PRSS0003AA-A
MASS[Typ.]
2.0g
Unit: mm
10.5Max
2.8
17
8.5
5.0
1.2
5.2
φ3.2 ± 0.2
13.5Min
3.6
1.3Max
0.8
2.54
0.5
2.6
4.5
2.54
Order Code
Lead form
Straight type
Lead form
Standard packing
Vinyl sack
Plastic Magazine (Tube)
Quantity
100
50
Standard order code
Type name +B
Type name +B – Lead forming code
Standard order
code example
BCR5PM-12LB
BCR5PM-12LB-A8
Note : Please confirm the specification about the shipping in detail.
R07DS0085EJ0400 Rev.4.00
Page 7 of 7
Notice
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