PHOTODIODE 16 ELEMENT AXUV16ELG

PHOTODIODE 16 ELEMENT
AXUV16ELG
Dimensions are in inch [metric] units.
FEATURES
• 40 pin dual in-line package
• Ideal for electron detection
• 100% internal QE
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C (Per Element)
PARAMETERS
TEST CONDITIONS
MIN
2mm x 5mm
Active Area
TYP
MAX
mm2
10
A/W
(see graphs on next page)
Responsivity, R
Reverse Breakdown Voltage, VR
IR = 1µA
Capacitance, C
VR = 0V
Rise Time
VR = 0V
Shunt Resistance (per element)
Vf = ±10mV
UNITS
Volts
25
40
500
100
pF
nsec
MOhms
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient1
-10° TO 40°C1
Nitrogen or Vacuum
-20°C TO 80°C
70°C
Maximum Junction Temperature
Lead soldering temperature
2
260°C
1
Temperatures exceeding these parameters may create oxide growth on the active area.
Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised.
2
0.080" from case for 10 seconds.
Shipped with temporary cover to protect photodiode and wire bond.
Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover.
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013
PHOTODIODE 16 ELEMENT
RESPONSIVITY (A/W)
0.30
AXUV16ELG
ELECTRON RESPONSE
0.25
0.20
0.15
0.10
0.05
0.00
100
1000
10,000
100,000
ENERGY (ev)
RESPONSIVITY (A/W)
0.30
EUV-UV PHOTON RESPONSE
0.25
0.20
0.15
0.10
0.05
0.00
0
RESPONSIVITY (A/W)
0.5
50
100
150
WAVELENGTH (nm)
200
250
UV-VIS-NIR PHOTON RESPONSIVITY
0.4
0.3
0.2
0.1
0.0
200
300
400
500
600
700
800
900
1000
1100
WAVELENGTH (nm)
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013