Preliminary Datasheet RJK1535DPJ, RJK1535DPE, RJK1535DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G0479-0300 Rev.3.00 Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline LDPAK D 4 G 1 2 3 1 1. Gate 2. Drain 3. Source 4. Drain 2 3 RJK1535DPE 3 RJK1535DPF RJK1535DPJ 1 S 4 4 2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Ratings 150 ±30 40 100 40 100 30 67.5 100 1.25 150 Unit V V A A A A A mJ W C/W C Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C REJ03G0479-0300 Rev.3.00 Jun 30, 2010 Page 1 of 7 RJK1535DPJ, RJK1535DPE, RJK1535DPF Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance RDS(on) Min 150 — — 3.0 13 — Typ — — — — 22 0.045 Max — 1 ±0.1 4.5 — 0.052 Unit V A A V S Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd — — — — — — — — — — 1420 300 42 30 170 70 80 35 9 16 — — — — — — — — — — pF pF pF ns ns ns ns nC nC nC Body-Drain diode forward voltage Body-Drain diode reverse recovery time VDF trr — — 1.0 110 1.5 — V ns Body-Drain diode reverse recovery charge Qrr — 0.5 — C Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| Test conditions ID = 10 mA, VGS = 0 VDS = 150 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 20 A, VDS = 10 V Note4 ID = 20 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 20 A VGS = 10 V RL = 3.75 Rg = 10 VDD = 120 V VGS = 10 V ID = 40 A IF = 40 A, VGS = 0 Note4 IF = 40 A, VGS = 0 diF/dt = 100 A/s Notes: 4. Pulse test REJ03G0479-0300 Rev.3.00 Jun 30, 2010 Page 2 of 7 RJK1535DPJ, RJK1535DPE, RJK1535DPF Preliminary Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 Ta = 25°C 300 10 100 ID (A) 120 PW 10 0μ (1 = 1 sh s m ot) s 30 10 Drain Current Channel Dissipation Pch (W) 160 80 40 μs 3 Operation in this area is limited by 1 RDS(on) 0.3 0.1 0.03 0.01 0 50 100 150 Case Temperature 1 200 Tc (°C) Typical Output Characteristics 50 10 V Typical Transfer Characteristics 50 Pulse Test 7.5 V VDS = 10 V Pulse Test 40 7V 30 6.5 V 20 6V 10 VGS = 5.5 V 4 8 12 Drain to Source Voltage ID (A) 40 Drain Current Drain Current ID (A) 8V 0 Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage VDS(on) (V) Pulse Test 6 4 ID = 40 A 2 20 A 10 A 0 4 8 12 Gate to Source Voltage REJ03G0479-0300 Rev.3.00 Jun 30, 2010 16 VGS (V) 20 30 20 10 Tc = 75°C 0 16 20 VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 8 100 300 1000 30 3 10 Drain to Source Voltage VDS (V) 25°C −25°C 2 4 6 Gate to Source Voltage 8 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current 1 VGS = 10 V 0.5 0.2 0.1 0.05 0.02 Pulse Test 0.01 1 3 10 30 Drain Current 100 300 ID (A) 1000 Page 3 of 7 Preliminary Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 0.2 VGS = 10 V Pulse Test Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) RJK1535DPJ, RJK1535DPE, RJK1535DPF 0.16 0.12 0.08 ID = 40 A 20 A 10 A 0.04 0 −25 0 25 50 75 Case Temperature 100 125 150 100 Tc = −25°C 30 10 25°C 3 1 75°C 0.3 VDS = 10 V Pulse Test 0.1 0.1 0.3 Tc (°C) 100000 500 30000 200 10000 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 100 50 20 10 5 di / dt = 100 A / μs VGS = 0, Ta = 25°C 100 ID (A) VGS = 0 f = 1 MHz 3000 Ciss 1000 300 Coss 100 Crss 30 10 1 0 3 10 30 100 300 1000 Reverse Drain Current IDR (A) VDS 8 60 4 VDD = 120 V 60 V 30 V 0 8 16 Gate Charge REJ03G0479-0300 Rev.3.00 Jun 30, 2010 24 32 Qg (nC) 0 40 Switching Time t (ns) 120 12 VDD = 30 V 60 V 120 V VGS (V) 180 Gate to Source Voltage VGS 100 150 VDS (V) Switching Characteristics 10000 16 ID = 40 A 50 Drain to Source Voltage Dynamic Input Characteristics 240 VDS (V) 30 10 Typical Capacitance vs. Drain to Source Voltage 1 Drain to Source Voltage 3 Drain Current Body-Drain Diode Reverse Recovery Time 2 1 VGS = 10 V, VDD = 75 V PW = 5 μs, duty < 1 % RG = 10 Ω 1000 tr tf tf td(off) 100 td(on) tr 10 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 Page 4 of 7 RJK1535DPJ, RJK1535DPE, RJK1535DPF Preliminary Reverse Drain Current vs. Source to Drain Voltage Gate to Source Cutoff Voltage vs. Case Temperature 5 VDS = 10 V Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current IDR (A) 50 40 30 20 10 10 V VGS = 0 V 5V Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 ID = 10 mA 4 1 mA 3 0.1 mA 2 1 0 -25 2.0 0 VSD (V) 25 50 75 Case Temperature 100 125 150 Tc (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c(t) = γs (t) • θch – c θch – c = 1.25°C/W, Tc = 25°C 0.1 0.05 0.03 PDM 0.02 1 e 0.0 puls t ho 1s 0.01 10 μ D= PW T PW T 100 μ 1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V Vin V DD = 75 V Vout 10% 10% 90% td(on) REJ03G0479-0300 Rev.3.00 Jun 30, 2010 tr 10% 90% td(off) tf Page 5 of 7 RJK1535DPJ, RJK1535DPE, RJK1535DPF Preliminary Package Dimensions RJK1535DPJ JEITA Package Code RENESAS Code Package Name MASS[Typ.] ⎯ PRSS0004AE-A LDPAK(L) / LDPAK(L)V 1.40g (1.4) 4.44 ± 0.2 10.2 ± 0.3 8.6 ± 0.3 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 0.2 0.86 +– 0.1 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 2.49 ± 0.2 11.0 ± 0.5 11.3 ± 0.5 0.3 10.0 +– 0.5 Unit: mm 0.4 ± 0.1 RJK1535DPE SC-83 RENESAS Code Package Name PRSS0004AE-B LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] Unit: mm 1.30g 7.8 6.6 (1.5) 10.0 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 1.7 JEITA Package Code 2.2 1.37 ± 0.2 2.54 ± 0.5 REJ03G0479-0300 Rev.3.00 Jun 30, 2010 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 1.3 ± 0.2 Page 6 of 7 RJK1535DPJ, RJK1535DPE, RJK1535DPF Preliminary RJK1535DPF ⎯ RENESAS Code Package Name PRSS0004AE-C LDPAK(S)-(2) / LDPAK(S)-(2)V MASS[Typ.] Unit: mm 1.35g (1.4) 4.44 ± 0.2 7.8 6.6 (2.3) 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 + 0.3 – 0.5 1.3 ± 0.15 10.0 (1.5) 8.6 ± 0.3 10.2 ± 0.3 1.7 JEITA Package Code 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 5.0 +– 0.5 1.3 ± 0.2 Ordering Information Part Name RJK1535DPE-LE Note: Quantity 1000 pcs Shipping Container Taping For some grades, production may be terminated. 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