isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ16002A DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 500V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications. ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 1000 V VCEO(SUS) Collector-Emitter Voltage 500 V Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 4 A IBM Base Current-Peak 8 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ VEBO B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.4 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ16002A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=1.5A; IB= 0.2A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.4A IC= 3A; IB= 0.4A,TC=100℃ 2.5 2.5 V IC= 3A; IB= 0.4A IC= 3A; IB= 0.4A,TC=100℃ 1.5 1.5 V 500 Base-Emitter Saturation Voltage UNIT V B B VBE(sat) MAX B B ICEV Collector Cutoff Current VCEV=1000V;VBE(off)=1.5V VCEV=1000V;VBE(off)=1.5V;TC=100℃ 0.25 1.5 mA ICER Collector Cutoff Current VCE= 850V; RBE= 50Ω,TC= 100℃ 2.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 1.0 mA hFE DC Current Gain IC= 5A ; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0kHz 200 pF 30 100 ns 100 300 ns 1000 3000 ns 60 300 ns 5 Switching times;Resistive Load td Delay Time tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 3A , VCC= 250V; RB2= 8Ω; IB1= 0.4A; IB2= 0.8A;PW= 30μs; Duty Cycle≤2.0% 2