MJ10012 NPN Silicon Power Darlington Transistor TO3 Type Package Description: The MJ10012 is high−voltage, high−current Darlington transistor in a TO3 type package designed for automotive ignition, switching regulation and motor control applications. Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 400Vdc (Min) D 175 Watts Capability at 50 Volts Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Emitter Voltage (RBE = 273 ), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 550V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Power Dissipation, PD TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W TC = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/5C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +2005C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +2005C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.05C/W Lead Temperature (During Soldering, 1/8” from case, 5 sec), TL . . . . . . . . . . . . . . . . . . . . . . . +2755C Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 3 10%. Electrical Characteristics: (TC = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCEO(sus) IC = 200mA, IB = 0, Vclamp = 400V 400 − − V VCER(sus) IC = 200mA, RBE = 273 , Vclamp = 400V 425 − − V OFF Characteristics (Note 2) Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ICER VCER = 550V, RBE = 273 − − 1.0 mA ICBO VCBO= 600V, IE = 0 − − 1.0 mA IEBO VEB = 6V, IC = 0 − − 40 mA hFE VCE = 6V, IC = 3A 300 550 − VCE = 6V, IC = 6A 100 350 2000 VCE = 6V, IC = 10A 20 150 − IC = 3A, IB = 600mA − − 1.5 V IC = 6A, IB = 600mA − − 2.0 V IC = 10A, IB = 2A − − 2.5 V IC = 6A, IB = 600mA − − 2.5 V IC = 10A, IB = 2A − − 3.0 V IC = 10A, VCE = 6V − − 2.8 V VF IF = 10A − 2.0 3.5 V Cob VCB = 10V, IE = 0, ftest = 100kHz 165 − 350 pF − 7.5 15 5s ON Characteristics (Note 3) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage VCE(sat) VBE(sat) Base−Emitter ON Voltage VBE(on) Diode Forward Voltage Dynamic Characteristics Output Capacitance Switching Characteristics Storage Time ts Fall Time tf − 5.2 15 5s IC2L/2 − − 180 mJ VCC = 12V, IC = 6A, IB1 = IB2 = 300mA Functional Tests Pulsed Energy Test Note 2. Pulse Test: Pulse Width = 3005 s, Duty Cycle = 2%. C B 1k 30 E .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case