NTE NTE163A

NTE163A
Silicon NPN Transistor
Horizontal Deflection
Description:
The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color
deflection circuits.
Features:
D Collector–Emitter Voltage: VCEX = 1500V
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 700V
D Switching Times With Inductive Loads: tf = 0.4µs (Typ) @ IC = 4.5A
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A
Peak Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Total Device Dissipation (TC = +95°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W
Derate Above 95°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.625W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +115°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +115°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6°C/W
Maximum Lead Temperature (For Soldering, 1/8” from case for 5sec), TL . . . . . . . . . . . . . . . +275°C
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
VCEO(sus) IC = 100mA, IB = 0
700
–
–
V
Collector Cutoff Current
ICES
VCE = 1500V, VBE = 0
–
–
1.0
mA
Emitter–Base Voltage
VEBO
IE = 10mA, IC = 0
5
–
–
V
2.25
–
–
ON Characteristics (Note 2)
DC Current Gain
hFE
IC = 4.5A, VCE = 5V
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 4.5A, IB = 2A
–
–
5
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 4.5A, IB = 2A
–
–
1.5
V
IC = 100mA, VCE = 5V, f = 1MHz
–
4
–
MHz
VCB = 10V, IE = 0, f = 1MHz
–
125
–
pF
IC = 4.5A, IB = 1.8A, LB = 10µH
–
0.6
–
µs
Dynamic Characteristics
Current Gain–Bandwidth Product
Output Capacitance
fT
Cob
Switching Characteristics
Fall Time
tf
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case