NTE389 Silicon NPN Transistor Horizontal Output Description: The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glass Passivated Base–Collector Junction D Forward Bias Safe Operating Area @ 50µs = 20A, 300V D Switching Times with Inductive Loads: tf = 0.5µs (Typ) @ IC = 3A Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Continouos Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Total Power Dissipation, PD TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W Maximum Lead Temperature (For Soldering, 1/8” from Case for 5sec), TL . . . . . . . . . . . . . . +275°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 1) Collector–Emitter Sustaining Voltage VCEO(sus) IC = 50mA, IB = 0 750 – – V Collector Cutoff Current ICES VCE = 1500V, VBE = 0 – – 1.0 mA Emitter Cutoff Current IEBO VBE = 5V, IC = 0 – – 1.0 mA ON Characteristics (Note 1) Collector–Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 1.2A – – 5.0 V Base–Emitter Saturation Voltage VBE(sat) IC = 3A, IB = 1.2A – – 1.5 V IC = 0.1A, VCE = 5V, ftest = 1MHz – 4 – MHz Cob VCB = 10V, IE = 0, f = 0.1MHz – 90 – pF tf IC = 3A, IB1 = 1.2A, LB = 8µH – 0.5 1.0 µs Dynamic Characteristics Current Gain – Bandwidth Product fT Output Capacitance Switching Characteristics Fall Time Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle = 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case