NTE466 Silicon N–Channel JFET Transistor Chopper, High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40V Forward Gate Current, IG(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit –40 – – V VGS = –20V, VDS = 0 – – 0.25 nA VGS = –20V, VDS = 0, TA = +150°C – – 0.5 µA VDS = 15V, ID = 0.5nA –4 – –10 V VDS = 15V, VGS = –10V – – 0.25 nA VDS = 15V, VGS = –10V, TA = +150°C – – 0.5 µA VDS = 15V, VGS = 0, Note 1 50 – – mA VDS(on) ID = 20mA, VGS = 0 – – 0.75 V rDS(on) VGS = 0, ID = 0, f = 1kHz – – 25 Ω OFF Characteristics Gate–Source Breakdown Voltage Gate Reverse Current Gate–Source Cutoff Voltage Drain Cutoff Current V(BR)GSS IG = 1A, VDS = 0 IGSS VGS(off) ID(off) ON Characteristics Zero–Gate–Voltage Drain Current Drain–Source ON–Voltage IDSS Small–Signal Characteristics Drain–Source “ON” Resistance Input Capacitance Ciss VDS = 0, VGS = –10V, f = 1MHz – – 18 pF Reverse Transfer Capacitance Crss VDS = 0, VGS = –10V, f = 1MHz – – 0.8 pF td(on) VDD = 10V, ID(on) = 20mA, VGS(on) = 0, VGS(off) = –10V – – 6 ns – – 3 ns – – 25 ns Switching Characteristics (Note 2) Turn–On Delay Time Rise Time tr Turn–Off Time toff Note 1. Pulse Test: Pulse Width = 100ms, Duty Cycle ≤ 10%. Note 2. The ID(on) values are nominal; exact values vary slightly with transistor parameters. .230 (5.84) Dia Max .195 (4.95) Dia Max .210 (5.33) Max .030 (.762) Max .500 (12.7) Min .018 (0.45) Drain Source Gate 45° .041 (1.05)