NTE459 N−Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch TO72 Type Package Absolute Maximum Ratings: (TA = +255C unless otherwise specified) Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/5C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1755C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +2005C Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit −50 − − V VGS = −30V, VDS = 0 − − −0.1 nA VGS = −30V, VDS = 0, TA = +1505C − − −100 nA VGS(off) ID = 0.5nA, VDS = 15V − − −6 V VGS ID = 2005 A, VDS = 15V −1 − −4 V IDSS VDS = 15V, VGS = 0, Note 1 2 − 10 mA |yfs| VDS = 15V, VGS = 0, f = 1kHz, Note 1 3000 − 6500 5 mho VDS = 15V, VGS = 0, f = 100MHz 3000 − − 5 mho OFF Characteristics Gate−Source Breakdown Voltage Gate Reverse Current Gate−Source Cutoff Voltage Gate−Source Voltage V(BR)GSS IG = −15 A, VDS = 0 IGSS ON Characteristics Zero−Gate−Voltage Drain Current Small−Signal Characteristics Forward Transfer Admittance Output Admittance |yos| VDS = 15V, VGS = 0, f = 1kHz, Note 1 − − 20 5 mho Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1MHz − − 6 pF Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1MHz − − 3 pF Note 1. Pulse Test: Pulse Width 3 100ms, Duty Cycle 3 10%. Rev. 10−13 Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Functional Characteristics Noise Figure NF VDS = 15V, VGS = 0, RG = 1M3 , f = 10Hz, BW = 5Hz − − 5 dB Equivalent Short−Circuit Input Noise Voltage en VDS = 15V, VGS = 0, f = 10Hz, BW = 5Hz − − 200 nV/Hz1/2 .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min D G S .018 (0.45) Dia Drain Source Gate 455 Case .040 (1.02)