459

NTE459
N−Channel Silicon JFET Transistor
AF Amplifier/Chopper/Switch
TO72 Type Package
Absolute Maximum Ratings: (TA = +255C unless otherwise specified)
Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50V
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/5C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1755C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +2005C
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−50
−
−
V
VGS = −30V, VDS = 0
−
−
−0.1
nA
VGS = −30V, VDS = 0, TA = +1505C
−
−
−100
nA
VGS(off)
ID = 0.5nA, VDS = 15V
−
−
−6
V
VGS
ID = 2005 A, VDS = 15V
−1
−
−4
V
IDSS
VDS = 15V, VGS = 0, Note 1
2
−
10
mA
|yfs|
VDS = 15V, VGS = 0, f = 1kHz,
Note 1
3000
−
6500
5 mho
VDS = 15V, VGS = 0, f = 100MHz
3000
−
−
5 mho
OFF Characteristics
Gate−Source Breakdown Voltage
Gate Reverse Current
Gate−Source Cutoff Voltage
Gate−Source Voltage
V(BR)GSS IG = −15 A, VDS = 0
IGSS
ON Characteristics
Zero−Gate−Voltage Drain Current
Small−Signal Characteristics
Forward Transfer Admittance
Output Admittance
|yos|
VDS = 15V, VGS = 0, f = 1kHz,
Note 1
−
−
20
5 mho
Input Capacitance
Ciss
VDS = 15V, VGS = 0, f = 1MHz
−
−
6
pF
Reverse Transfer Capacitance
Crss
VDS = 15V, VGS = 0, f = 1MHz
−
−
3
pF
Note 1. Pulse Test: Pulse Width 3 100ms, Duty Cycle 3 10%.
Rev. 10−13
Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Functional Characteristics
Noise Figure
NF
VDS = 15V, VGS = 0, RG = 1M3 ,
f = 10Hz, BW = 5Hz
−
−
5
dB
Equivalent Short−Circuit Input Noise
Voltage
en
VDS = 15V, VGS = 0, f = 10Hz,
BW = 5Hz
−
−
200
nV/Hz1/2
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.030 (.762)
.500
(12.7)
Min
D
G
S
.018 (0.45) Dia
Drain
Source
Gate
455
Case
.040 (1.02)