MJ15003 (NPN) & MJ15004 (PNP) Silicon Complementary

MJ15003 (NPN) & MJ15004 (PNP)
Silicon Complementary Transistors
High Power Audio, Disk Head Positioner
for Linear Applications
Description:
The MJ15003 (NPN) and MJ15004 (PNP) are complementary silicon power transistors in a TO3 type
package designed for high power audio, disk head positioners, and other linear applications.
Features:
D High Safe Operating Area: 250W @ 50V
D For Low Distortion Complementary Designs
D High DC Current Gain: hFE = 25 Min @ IC = 5A
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Continuous Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/5C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +2005C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +2005C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.705C/W
Lead Temperature (During Soldering, 1/16” from Case, 10sec Max), TL . . . . . . . . . . . . . . . . +2655C
Electrical Characteristics: (TC = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
140
−
−
V
VCE = 140V, VBE(off) = 1.5V
−
−
100
5A
VCE = 140V, VBE(off) = 1.5V, TC = +1505C
−
−
2
mA
ICEO
VCE = 140V, IB = 0
−
−
250
5A
IEBO
VEB = 5V, IC = 0
−
−
100
5A
OFF Characteristics
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 200mA, IB = 0, Note 1
ICEX
Note 1. Pulse Test: Pulse Width = 3005 s, Duty Cycle = 2%.
Electrical Characteristics (Cont’d): (TC = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCE = 50V, t = 1s (non−repetitive)
5
−
−
5A
VCE = 100V, t = 1s (non−repetitive)
1
−
−
5A
VCE = 2V, IC = 5A
25
−
150
Second Breakdown
IS/b
Second Breakdown Collector Current
with Base Forward Bias
ON Characteristics
DC Current Gain
hFE
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 5A, IB = 500mA
−
−
1
V
Base−Emitter On Voltage
VBE(on)
VCE = 2V, IC = 5A
−
−
2
V
VCE = 10V, IC = 500mA, ftest = 0.5MHz
2
−
−
MHz
VCB = 10V, IE = 0, ftest = 1MHz
−
−
1000
pF
Dynamic Characteristics
Current Gain−Bandwidth Product
fT
Output Capacitance
Cob
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case