NTE228A Silicon NPN Transistor High Voltage Amp, Video Output Description: The NTE228A is a silicon NPN transistor in a TO202M type package designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators. Features: D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 350V (Min) @ IC = 1mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 600mV (Max) @ IC = 20mA D Low Collector–Emitter Capacitance: Ccb = 3pF (Max) @ VCB = 30V D 2 Watts Free Air Dissipation @ TA = +25°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/°C Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +250°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 350 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 450 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 6 – – V Collector Cutoff Current ICBO VCB = 250V, IE = 0 – – 0.2 µA Emitter Cutoff Current IEBO VBE = 5V, IC = 0 – – 0.1 µA Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 1mA, VCE = 10V 25 – – IC = 30mA, VCE = 10V 40 – 180 IC = 30mA, IB = 3mA – – 0.6 V IC = 50mA, IB = 5mA – – 1.5 V IC = 30mA – – 0.85 V IC = 10mA, VE = 20V, f = 20MHz 45 – 200 MHz VCB = 20V, IE = 0, f = 1MHz – – 3 pF ON Characteristics (Note 1) DC Current Gain hFE Collector–Emitter Saturation Voltage Base–Emitter ON Voltage VCE(sat) VBE(on) Dynamic Characteristics Current Gain–Bandwidth Product fT Collector–Base Capacitance Ccb Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .394 (10.0) .165 (4.2) Dia C .492 (12.5) .335 (8.5) .197 (5.0) .059 (1.5) x 45° Chamf .335 (8.5) .119 (3.0) .532 (13.5) E .098 (2.5) B C .181 (4.6) .138 (3.5)