2N404 Germanium PNP Transistor Medium Speed Switch TO5 Type

2N404
Germanium PNP Transistor
Medium Speed Switch
TO5 Type Package
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −12V
Collector−Emitter Voltage (Note 1), VCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −24V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Device Dissipation, PD
TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
TA = +55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mW
TA = +71C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35mW
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +100C
Note 1. Reach through voltage.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector−Base Breakdown Voltage
V(BR)CBO IC = −20A
−25
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = −20A
−12
−
−
V
−24
−
−
V
−
−
−5
A
−
−
−90
A
VEB = 2.5V
−
−
−2.5
A
IB = 0.4mA, IC = −12mA
−
−
−0.15
V
IB = 1mA, IC = 24mA
−
−
−0.2
V
IB = 0.4mA, IC = −12mA
−
−
−0.35
V
IB = 1mA, IC = 24mA
−
−
−0.4
V
Reach Through Voltage
VRT
Collector Cutoff Current
ICBO
VCB = −12V
TA = +80C
Emitter Cutoff Current
Collector−Emitter Saturation Voltage
Base Input Voltage
IEBO
VCE(sat)
VBE
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
4
−
−
mcs
High Frequency Characteristics
Alpha Cutoff Frequency
fhfb
Collector Capacitance
Cob
f = 2mcs
−
−
20
pF
Stored Base Charge
QSB
IB = 1mA, IC = −10mA
−
−
1400
pcb
Base Spreading Resistance
r’b
−
100
−

Input Resistance
hie
−
2700
−

Noise Figure
NF
−
3.5
−
dB
1kc, 1 cycle wide
Low Frequency Characteristics (Common Emitter)
Output Admittance
hoe
−
400
−
mhos
Voltage Feedback Ratio
hre
−
8.4
−
x10−4
Forward Current Transfer Ratio
hfe
−
86
−
Input Impedance
hie
−
450
−
.352 (8.95) Dia Max
.320 (98.13) Dia Max
.250 (6.35)
Max
1.500 (38.1)
Min
.019 (0.5) Dia
Base
Emitter
Collector
45
.031 (.793)
