2N3439 & 2N3440 Silicon NPN Transistor Power Amplifier & High

2N3439 & 2N3440
Silicon NPN Transistor
Power Amplifier & High Speed Switch
TO−39 Type Package
Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Collector−Emitter Voltage, VCEO
2N3439 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
2N3440 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
Collector−Base Voltage, VCBO
2N3439 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
2N3440 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.75mW/C
Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.5mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Electrical Characteristics: (T A = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector-Emitter Breakdown Voltage
2N3439
2N3440
Collector Cutoff Current
2N3439
V(BR)CEO IC = 10mA, RBB1 = 470,
VBB1 = 6V, L = 25mH (min),
f = 30 to 60Hz
ICEO
2N3440
2N3439
ICEX
2N3440
2N3439
ICBO
2N3440
Emitter Cutoff Current
IEBO
350
−
−
V
250
−
−
V
VCE = 300V
−
−
2.0
A
VCE = 200V
−
−
2.0
A
VCE = 450V, VBE = 1.5V
−
−
5.0
A
VCE = 300V, VBE = 1.5V
−
−
5.0
A
VCB = 360V
−
−
2.0
A
VCB = 450V
−
−
5.0
A
VCB = 250V
−
−
2.0
A
VCB = 300V
−
−
5.0
A
VEB = 7V
−
−
10
A
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
hFE
IC = 20mA, VCE = 10V
40
−
160
IC = 2.0mA, VCE = 10V
30
−
−
IC = 0.2mA, VCE = 10V
10
−
−
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 50mA, IB = 4mA
−
−
0.5
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 50mA, IB = 4mA
−
−
1.3
V
Dynamic Characteristics
Magnitude of Common Emitter
Small−Signal Short−Circuit
Forward Current Transfer
Ratio
|hfe|
IC = 10mA, VCE = 10V, f = 5MHz
3.0
−
15
Forward Current Transfer Ratio
hfe
IC = 5mA, VCE = 10V, f = 1kHz
25
−
−
Output Capacitance
Cobo
VCB = 10V, IE = 0, 100kHz  f  1MHz
−
−
10
pF
Input Capacitance
Cibo
VCB = 5V, IC = 0,100kHz  f  1MHz
−
−
75
pF
Note 1. Pulse Test; Pulse Width = 300s, Duty Cycle  2%.
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260
(6.6)
Max
.500
(12.7)
Min
.018 (0.45)
Base
Emitter
Collector/Case
45
.031 (.793)