2N2925 Silicon NPN Transistor General Purpose TO−92 Type

2N2925
Silicon NPN Transistor
General Purpose
TO−92 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current (Note 1), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA  +25C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.6mW/C
Total Power Dissipation (TA  +55C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.6mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Lead Temperature (During Soldering, 1/16” from case, 10sec max), TL . . . . . . . . . . . . . . . . . +260C
Note 1. Determined from power limitations due to saturation voltages at this current
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
ICBO
Test Conditions
Min
Typ
Max
Unit
VCB = 25V
−
−
0.1
A
VCB = 25V, TA = +100C
−
−
15
A
A
Emitter Cutoff Current
IEBO
VEB = 5V
−
−
0.1
DC Forward Current Transfer Ratio
hFE
VCE = 4.5V, IC = 2mA
−
215
−
Small−Signal Forward Current Transfer Ratio
hfe
VCE = 10V, IC = 2mA, f = 1kHz
235
−
−
Input Impedance
hfb
VCE = 10V, IC = 2mA, f = 1kHz
−
15
−

Gain Bandwidth Product
fT
VCB = 5V, IC = 4mA
−
160
−
MHz
IC = 100A, VCE = 5V,
Rg = 2000, f = 10kHz,
−
2.6
−
dB
4.5
7.0
10
pF
Noise Figure
NF
BW = 1Hz
Collector Capacitance
Ccbo
VCB = 10V, IE = 0, f = 1MHz
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E C
B
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max