NTE172A Silicon NPN Transistor Darlington Preamp, Medium Speed Switch Description: The NTE172A is a silicon NPN Darlington transistor in a TO92 type case designed for preamplifier input stages requiring input impedances of several megohms or extremely low level, high gain, low noise amplifier applications. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Lead Temperature (During Soldering, 1/16” ±1/32” from case for 10sec max.), TL . . . . . . . . +260°C Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Collector–Base Breakdown Voltage V(BR)CBO IC = 0.1µA, IE = 0 40 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0 40 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 0.1µA, IE = 0 12 – – V VCE = 5V, IC = 2mA 7000 – 70000 VCE = 5V, IC = 100mA 20000 – – VCB = 40V, IE = 0 – – 100 nA VCB = 40V, IE = 0, TA = +100°C – – 20 µA DC Current Gain Collector Cutoff Current hFE ICBO Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VEB = 12V, IC = 0 – – 100 nA Static Characteristics (Cont’d) Emitter Cutoff Current IEBO Collector–Emitter Saturation Voltage VCE(sat) IC = 200mA, IB = 0.2mA – – 1.4 V Base–Emitter Saturation Voltage VBE(sat) IC = 200mA, IB = 0.2mA – – 1.6 V VBE VCE = 5V, IC = 200mA – – 1.5 V Small–Signal Current Gain hfe VCE = 5V, IC = 2mA, f = 1kHz 7000 – – Current Gain–High Frequency |hfe| VCE = 5V, IC = 2mA, f = 1kHz 15.6 – – dB Base–Emitter Voltage Dynamic Characteristics Current Gain–Bandwidth Product fT VCE = 5V, IC = 2mA, f = 10MHz 60 – – MHz Input Impedance hie VCE = 5V, IC = 2mA, f = 1kHz – 650 – kΩ Collector–Base Capacitance Ccb VCB = 10V, f = 1MHz – 7.6 10.0 pF Emitter Capacitance Ceb VEB = 0.5V, f = 1MHz – 10.5 – pF IC = 0.6mA, VCE = 5V, RG = 160kΩ, f = 10Hz to 10kHz, B.W. = 15.7kHz – 195 230 nV/pHz Noise Voltage en .135 (3.45) Min C .210 (5.33) Max Seating Plane B E .021 (.445) Dia Max .500 (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max