NTE2915 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package Features: D Low Gate−to−Drain Charge to Reduce Switching Losses D Fully Characterized Capacitance Including Effective COSS to Simplify Design D Fully Characterized Avalanche Voltage and Current D G Applications: D High Frequency DC−DC Converters S Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31A TC = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124A Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W/5C Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V Peak Diode Recovery dv/dt (Note 2), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.9V/ns Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mJ Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1755C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1755C Lead Temperature (During Soldering, 1.6mm from Case, 10 sec max.), TL . . . . . . . . . . . . . . +3005C Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.755C/W Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.55C/W Maximum Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 625C/W Note 1. Repetitive rating: pulse width limited by maximum channel temperature. Note 2. ISD 3 18A, di/dt 3 110A/s, VDD 3 V(BR)DSS, TJ +1755C. Note 3. Starting TJ = +255C, L = 3.8mH, RG = 25W, IAS = 18A. Rev. 10−13 Electrical Characteristics: (TJ = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 200 − − V − 0.25 − V/5C − − 0.082 W Static Characteristics Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient V(BR)DSS VGS = 0V, ID = 250mA +V(BR)DSS/+TJ Reference to +255C, ID = 1mA Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 18A, Note 4 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 3.0 − 5.5 V IDSS VDS = 200V, VGS = 0V − − 25 mA VDS = 160V, VGS = 0V, TJ = +1505C − − 250 mA VGS = +30V − − +100 nA Drain−Source Leakage Current Gate−Source Leakage Current IGSS Dynamic Characteristics Forward Transconductance gfs VDS = 50V, ID = 18A 17 − − S Total Gate Charge Qg − 70 110 nC Gate−to−Source Charge Qgs ID = 18A, VDS = 160V, VGS = 10V, Note 4 − 18 27 nC Gate−to−Drain (“Miller”) Charge Qgd − 33 49 nC Turn−On Delay Time td(on) − 16 − ns − 38 − ns td(off) − 26 − ns tf − 10 − ns − 2370 − pF Rise Time VDD = 100V, ID = 18A, RG = 2.5W, RD = 4.5W, Note 4 tr Turn−Off Delay Time Fall Time Input Capacitance Ciss Output Capacitance Coss − 390 − pF Reverse Transfer Capacitance Crss − 78 − pF Output Capacitance Coss VGS = 0V, VDS = 1V, f = 1MHz − 2860 − pF VGS = 0V, VDS = 160V, f = 1MHz − 150 − pF VGS = 0V, VDS = 0V to 160V, Note 5 − 170 − pF Effective Output Capacitance VGS = 0V, VDS = 25V, f = 1MHz Coss eff. Note 4. Pulse width 3 300ms; duty cycle 3 2%. Note 5. COSS eff. is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 80% VDSS. Source−Drain Ratings and Characteristics: Parameter Continuous Source Current (Body Diode) Symbol Test Conditions IS Min Typ Max Unit − − 31 A Pulsed Source Current (Body Diode) ISM Note 1 − − 124 A Diode Forward Voltage VSD IS = 18A, VGS = 0V, TJ = +255C, Note 4 − − 1.3 V Reverse Recovery Time trr − 200 300 ns Reverse Recovery Charge Qrr TJ = +255C, IF = 18A, di/dt = 100A/ms, Note 4 − 1.7 2.6 mC Forward Turn−On Time ton Intrinsic turn−on time is negligible (turn−on is dominated by LS + LD) Note 1. Repetitive rating: pulse width limited by maximum channel temperature. Note 4. Pulse width 3 300ms; duty cycle 3 2%. .420 (10.67) Max .110 (2.79) Drain .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain