NTE2376 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W/°C Gate–to–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 410mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300°C Mounting Torque (6–32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . 0.24°C/W Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. VDD = 50V, starting TJ = +25°C, L = 683µH, RG = 25Ω, IAS = 30A Note 3. ISD ≤ 30A, di/dt ≤ 190A/µs, VDD ≤ V(BR)DSS, TJ ≤ +150°C Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Drain–to–Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA Breakdown Voltage Temp. Coefficient ∆V(BR)DSS Reference to +25°C, ID = 1mA ∆TJ Min Typ Max Unit 200 – – V – 0.27 – V/°C – – 0.085 Ω Static Drain–to–Source On–Resistance RDS(on) VGS = 10V, ID = 18A, Note 4 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 – 4.0 V VDS = 50V, ID = 18A, Note 4 12 – – mhos VDS = 200V, VGS = 0V – – 25 µA VDS = 160V, VGS = 0V, TJ = +125°C – – 250 µA Forward Transconductance Drain–to–Source Leakage Current gfs IDSS Gate–to–Source Forward Leakage IGSS VGS = 20V – – 100 nA Gate–to–Source Reverse Leakage IGSS VGS = –20V – – –100 nA ID = 30A, VDS = 160V, VGS = 10V, Note 4 – – 140 nC – – 28 nC – – 74 nC – 16 – ns – 86 – ns td(off) – 70 – ns tf – 62 – ns Between lead, .250in. (6.0) mm from package and center of die contact – 5.0 – nH – 13.0 – nH VGS = 0V, VDS = 25V, f = 1MHz – 2800 – pF Total Gate Charge Qg Gate–to–Source Charge Qgs Gate–to–Drain (“Miller”) Charge Qgd Turn–On Delay Time td(on) Rise Time tr Turn–Off Delay Time Fall Time VDD = 100V, ID = 30A, RG = 6.2Ω, RD = 3.2Ω, Ω Note 4 Internal Drain Inductance LD Internal Source Inductance LS Input Capacitance Ciss Output Capacitance Coss – 780 – pF Reverse Transfer Capaticance Crss – 250 – pF Min Typ Max Unit – – 30 A Source–Drain Ratings and Characteristics: Parameter Symbol Continuous Source Current (Body Diode) IS Test Conditions Pulsed Source Current (Body Diode) ISM Note 1 – – 120 A Diode Forward Voltage VSD TJ = +25°C, IS = 30A, VGS = 0V, Note 4 – – 2.0 V Reverse Recovery Time trr – 360 540 ns Reverse Recovery Charge Qrr TJ = +25°C, IF = 30A, di/dt = 100A/µs, Note 4 – 4.6 6.9 µC Forward Turn–On Time ton Intrinsic turn–on time is neglegible (turn–on is dominated by LS+LD) Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 4. Pulse width ≤ 300µs; duty cycle ≤ 2%. .626 (15.9) Max .197 (5.0) .217 (5.5) See Note .787 (20.0) .143 (3.65) Dia Max .157 (4.0) .559 (14.2) Min .047 (1.2) .215 (5.45) G D .094 (2.4) S TO247 Note: Drain connected to metal part of mounting surface.