2922

NTE2922
MOSFET
N−Ch, Enhancement Mode
High Speed Switch
TO3P Type Package
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Isolated Central Mounting Hole
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
D
G
S
Absolute Maximum Ratings:
Continuous Drain Current (VGS = 10V), ID
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64A
Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180W
Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 390mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. VDD = 50V, starting TJ = +25C, L = 2.7mH, RG = 25, IAS = 16A
Note 3. ISD  16A, di/dt  200A/s, VDD  400V, TJ  +150C
Rev. 10−15
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V(BR)DSS
400
−
−
V
Breakdown Voltage Temp. Coefficient
V(BR)DSS Reference to +25C, ID = 1mA
TJ
−
0.51
−
V/C
−
−
0.30

2.0
−
4.0
V
VDS = 40V, ID = 8A
8
−
−
S
VGS = 0V, ID = 250A
Static Drain−to−Source On−Resistance
RDS(on)
VGS = 10V, ID = 8.9A
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250A
Forward Transconductance
gfs
Drain−to−Source Leakage Current
IDSS
VDS = 400V, VGS = 0V
−
−
25
A
Gate−to−Source Forward Leakage
IGSS
VGS = 20V, VDS = 0
−
−
100
nA
Gate−to−Source Reverse Leakage
IGSS
VGS = −20V, VDS = 0
−
−
−100
nA
ID = 16A, VDS = 320V, VGS = 10V,
Note 4
−
−
150
nC
−
−
23
nC
−
−
80
nC
−
16
−
ns
−
49
−
ns
td(off)
−
87
−
ns
tf
−
47
−
ns
Between lead, .250in. (6.0) mm from
package and center of die contact
−
5.0
−
nH
−
13
−
nH
VGS = 0V, VDS = 25V, f = 1MHz
−
2600
−
pF
Total Gate Charge
Qg
Gate−to−Source Charge
Qgs
Gate−to−Drain (“Miller”) Charge
Qgd
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
Fall Time
VDD = 200V, ID = 16A, RG = 6.2,
RD = 12, Note 4
Internal Drain Inductance
LD
Internal Source Inductance
LS
Input Capacitance
Ciss
Output Capacitance
Coss
−
660
−
pF
Reverse Transfer Capacitance
Crss
−
250
−
pF
Min
Typ
Max
Unit
−
−
16
A
Source−Drain Ratings and Characteristics:
Parameter
Symbol
Continuous Source Current (Body Diode)
IS
Test Conditions
Pulsed Source Current (Body Diode)
ISM
Note 1
−
−
64
A
Diode Forward Voltage
VSD
TJ = +25C, IS = 16A, VGS = 0V
−
−
1.6
V
Reverse Recovery Time
trr
−
380
570
ns
Reverse Recovery Charge
Qrr
TJ = +25C, IF = 16A,
di/dt = 100A/s, Note 4
−
4.7
7.1
C
Forward Turn−On Time
ton
Intrinsic turn−on time is neglegible (turn−on is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width  300s; duty cycle  2%.
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
G
D
S
.215 (5.47)