NTE NTE2397

NTE2397
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Continuous Drain Current (VGS = 10V), ID
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.3A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C
Gate–to–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 520mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300°C
Mounting Torque (6–32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5°C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. VDD = 50V, starting TJ = +25°C, L = 9.1µH, RG = 25Ω, IAS = 10A
Note 3. ISD ≤ 10A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ +150°C
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–to–Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient
∆V(BR)DSS Reference to +25°C, ID = 1mA
∆TJ
Min
Typ
Max
Unit
400
–
–
V
–
0.49
–
V/°C
–
–
0.55
Ω
Static Drain–to–Source On–Resistance
RDS(on)
VGS = 10V, ID = 6A, Note 4
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
2.0
–
4.0
V
VDS = 50V, ID = 6A, Note 4
5.8
–
–
mhos
VDS = 400V, VGS = 0V
–
–
25
µA
VDS = 320V, VGS = 0V, TJ = +125°C
–
–
250
µA
Forward Transconductance
Drain–to–Source Leakage Current
gfs
IDSS
Gate–to–Source Forward Leakage
IGSS
VGS = 20V
–
–
100
nA
Gate–to–Source Reverse Leakage
IGSS
VGS = –20V
–
–
–100
nA
ID = 10A, VDS = 320V, VGS = 10V,
Note 4
–
–
63
nC
–
–
9.0
nC
–
–
32
nC
–
14
–
ns
–
27
–
ns
td(off)
–
50
–
ns
tf
–
24
–
ns
Between lead, .250in. (6.0) mm from
package and center of die contact
–
4.5
–
nH
–
7.5
–
nH
VGS = 0V, VDS = 25V, f = 1MHz
–
1400
–
pF
Total Gate Charge
Qg
Gate–to–Source Charge
Qgs
Gate–to–Drain (“Miller”) Charge
Qgd
Turn–On Delay Time
td(on)
Rise Time
tr
Turn–Off Delay Time
Fall Time
VDD = 200V, ID = 10A, RG = 9.1Ω,
RD = 20Ω,
Ω Note 4
Internal Drain Inductance
LD
Internal Source Inductance
LS
Input Capacitance
Ciss
Output Capacitance
Coss
–
330
–
pF
Reverse Transfer Capaticance
Crss
–
120
–
pF
Min
Typ
Max
Unit
–
–
10
A
Source–Drain Ratings and Characteristics:
Parameter
Symbol
Continuous Source Current (Body Diode)
IS
Test Conditions
Pulsed Source Current (Body Diode)
ISM
Note 1
–
–
40
A
Diode Forward Voltage
VSD
TJ = +25°C, IS = 10A, VGS = 0V,
Note 4
–
–
2.0
V
Reverse Recovery Time
trr
–
370
790
ns
Reverse Recovery Charge
Qrr
TJ = +25°C, IF = 10A,
di/dt = 100A/µs, Note 4
–
3.8
8.2
µC
Forward Turn–On Time
ton
Intrinsic turn–on time is neglegible (turn–on is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width ≤ 300µs; duty cycle ≤ 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
.100 (2.54)
Source
Drain/Tab