CHENMKO 2N7002ESEPT

CHENMKO ENTERPRISE CO.,LTD
2N7002ESEPT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts
CURRENT 500 mAmpere
APPLICATION
* Relay driver
* High speed line driver
* Logic level transistor
SC-70/SOT-323
FEATURE
(2)
* Small surface mounting type. (SOT-23)
* High density cell design for low R DS(ON).
* Suitable for high packing density.
(3)
* Rugged and reliable.
* High saturation current capability.
* ESD protect in input gate 1.5KV
(1)
1.3±0.1
0.65
2.0±0.2
0.65
0.3±0.1
1.25±0.1
CONSTRUCTION
* N-Channel Enhancement with ESD protection in input
0.8~1.1
0.05~0.2
D
CIRCUIT
0~0.1
0.1Min.
3
2.0~2.45
1G
S
Dimensions in millimeters
2
Absolute Maximum Ratings
SC-70/SOT-323
TA = 25°C unless otherwise noted
2N7002ESEPT
Symbol
Parameter
VDSS
Drain-Source Voltage
60
V
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
60
V
VGSS
Gate-Source Voltage - Continuous
±20
- Non Repetitive (tp < 50µs)
ID
Maximum Drain Current - Continuous
- Pulsed
±40
TA= 25°C
500
TA= 100°C
800
PD
Maximum Power Dissipation
TJ,TSTG
Operating and Storage Temperature Range
Units
V
mA
400
mW
-65 to 150
°C
350
°C/W
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
2006-03
RATING CHARACTERISTIC CURVES ( 2N7002ESEPT )
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
60
75
Max
Units
1.0
µA
10
uA
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 10 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 48 V, VGS = 0 V
TJ =150°C
V
IGSSF
Gate - Body Leakage, Forward
VGS = 10 V, VDS = 0 V
0.5
uA
IGSSR
Gate - Body Leakage, Reverse
VGS = -15 V, VDS = 0 V
-0.5
uA
2.5
V
Ω
ON CHARACTERISTICS
(Note 1)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA
4.5
VGS = 5.0 V, ID = 50 mA
5.0
gFS
Forward Transconductance
VDS = VGS, ID = 1.0 mA
VDS = 10 V DS(on), ID = 200 m A
1
100
300
mS
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ton
Turn-On Time
toff
Turn-Off Time
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
13
40
8
30
pF
4
10
VDD = 50 V, RL = 250 Ω,
VGS = 10 V, RGEN = 50 Ω
3
10
nS
VDD = 50 V, RL = 250 Ω,
VGS = 10 V, RGEN = 50 Ω
9
15
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
300
mA
ISM
Maximum Pulsed Drain-Source Diode Forward Current
1.2
A
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 200 mA (Note 1)
1.5
V
trr
Reverse Recovery Time
Qr
Recovery Charge
IS = 300 mA, dIS /dt=-100 A/uS
VGS = 0 V, V DS = 25 V
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
0.85
30
nS
30
nC