CHENMKO ENTERPRISE CO.,LTD 2N7002ESEPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 500 mAmpere APPLICATION * Relay driver * High speed line driver * Logic level transistor SC-70/SOT-323 FEATURE (2) * Small surface mounting type. (SOT-23) * High density cell design for low R DS(ON). * Suitable for high packing density. (3) * Rugged and reliable. * High saturation current capability. * ESD protect in input gate 1.5KV (1) 1.3±0.1 0.65 2.0±0.2 0.65 0.3±0.1 1.25±0.1 CONSTRUCTION * N-Channel Enhancement with ESD protection in input 0.8~1.1 0.05~0.2 D CIRCUIT 0~0.1 0.1Min. 3 2.0~2.45 1G S Dimensions in millimeters 2 Absolute Maximum Ratings SC-70/SOT-323 TA = 25°C unless otherwise noted 2N7002ESEPT Symbol Parameter VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS < 1 MΩ) 60 V VGSS Gate-Source Voltage - Continuous ±20 - Non Repetitive (tp < 50µs) ID Maximum Drain Current - Continuous - Pulsed ±40 TA= 25°C 500 TA= 100°C 800 PD Maximum Power Dissipation TJ,TSTG Operating and Storage Temperature Range Units V mA 400 mW -65 to 150 °C 350 °C/W Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 2006-03 RATING CHARACTERISTIC CURVES ( 2N7002ESEPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min Typ 60 75 Max Units 1.0 µA 10 uA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V TJ =150°C V IGSSF Gate - Body Leakage, Forward VGS = 10 V, VDS = 0 V 0.5 uA IGSSR Gate - Body Leakage, Reverse VGS = -15 V, VDS = 0 V -0.5 uA 2.5 V Ω ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA 4.5 VGS = 5.0 V, ID = 50 mA 5.0 gFS Forward Transconductance VDS = VGS, ID = 1.0 mA VDS = 10 V DS(on), ID = 200 m A 1 100 300 mS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ton Turn-On Time toff Turn-Off Time VDS = 10 V, VGS = 0 V, f = 1.0 MHz 13 40 8 30 pF 4 10 VDD = 50 V, RL = 250 Ω, VGS = 10 V, RGEN = 50 Ω 3 10 nS VDD = 50 V, RL = 250 Ω, VGS = 10 V, RGEN = 50 Ω 9 15 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current 300 mA ISM Maximum Pulsed Drain-Source Diode Forward Current 1.2 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 200 mA (Note 1) 1.5 V trr Reverse Recovery Time Qr Recovery Charge IS = 300 mA, dIS /dt=-100 A/uS VGS = 0 V, V DS = 25 V Note: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. 0.85 30 nS 30 nC