CHENMKO CHM6428JPT

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Dual N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts
CHM6428JPT
CURRENT 4.1 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SO-8
FEATURE
* Small flat package. (SO-8 )
4.06 (0.160)
3.70 (0.146)
* High density cell design for extremely low RDS(ON).
* Rugged and reliable.
* High saturation current capability.
8
1
CONSTRUCTION
5.00 (0.197)
4.69 (0.185)
* N-Channel Enhancement
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
4
5
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
CIRCUIT
8
D1 D1 D2 D2
5
6.20 (0.244)
5.80 (0.228)
Dimensions in millimeters
1
4
S1 G1 S2 G2
Absolute Maximum Ratings
Symbol
.25 (0.010)
.17 (0.007)
SO-8
TA = 25°C unless otherwise noted
Parameter
CHM6428JPT
Units
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
±20
V
Maximum Drain Current - Continuous
4.1
ID
A
- Pulsed
PD
Maximum Power Dissipation
TJ
TSTG
(Note 3)
15
2000
mW
Operating Temperature Range
-55 to 150
°C
Storage Temperature Range
-55 to 150
°C
62.5
°C/W
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
2005-02
RATING CHARACTERISTIC CURVES ( CHM6428JPT )
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Min
60
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
1
µA
VGS = 20V,VDS = 0 V
+100
nA
VGS = -20V, VDS = 0 V
-100
nA
(Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
g FS
V
Forward Transconductance
VDS = VGS, ID = 250 µA
3
1
VGS=10V, ID=4.1A
56
68
VGS=4.5V, ID=3.5A
66
86
VDS =10V, ID = 4.1A
10
V
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
660
VDS = 25V, VGS = 0V,
f = 1.0 MHz
pF
70
40
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q
Gate-Drain Charge
gd
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
13.2
VDS=30V, ID=4.1A
17.5
nC
1.8
VGS=10V
2.7
12
24
I D = 1.0A , VGS = 10 V
3
6
RGEN= 6 Ω
31
62
3
6
V DD= 30V
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage I = 2.0A , VGS = 0 V
(Note 1)
S
(Note 2)
4.1
A
1.2
V