CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CHM6428JPT CURRENT 4.1 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) 4.06 (0.160) 3.70 (0.146) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 8 1 CONSTRUCTION 5.00 (0.197) 4.69 (0.185) * N-Channel Enhancement .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 4 5 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) CIRCUIT 8 D1 D1 D2 D2 5 6.20 (0.244) 5.80 (0.228) Dimensions in millimeters 1 4 S1 G1 S2 G2 Absolute Maximum Ratings Symbol .25 (0.010) .17 (0.007) SO-8 TA = 25°C unless otherwise noted Parameter CHM6428JPT Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current - Continuous 4.1 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) 15 2000 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C 62.5 °C/W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2005-02 RATING CHARACTERISTIC CURVES ( CHM6428JPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 60 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS 1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = 250 µA 3 1 VGS=10V, ID=4.1A 56 68 VGS=4.5V, ID=3.5A 66 86 VDS =10V, ID = 4.1A 10 V mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 660 VDS = 25V, VGS = 0V, f = 1.0 MHz pF 70 40 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t on Turn-On Time tr Rise Time t off Turn-Off Time tf Fall Time 13.2 VDS=30V, ID=4.1A 17.5 nC 1.8 VGS=10V 2.7 12 24 I D = 1.0A , VGS = 10 V 3 6 RGEN= 6 Ω 31 62 3 6 V DD= 30V nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I = 2.0A , VGS = 0 V (Note 1) S (Note 2) 4.1 A 1.2 V