Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment. Dimensions (Unit : mm) Applications Optical control equipment Light source for remote control devices φ3.8±0.3 φ3.5 1.1 0.5 2.5±1 2− Max.1 4−0.6 Notes: 1. Unspecified tolerance shall be ±0.2. 2. Dimension in parenthesis are show for reference. Min.24 Features 1) Compact (3.1mm). 2) High efficiency, high output PO8.4mW (IF50mA). 3) Wide radiation angle 1/216deg. 4) Peak wavelength well suited to silicon detectors (P940nm). 5) Good current-optical output linearity. 6) Long life, high reliability. 5.2±0.3 φ3.1±0.2 2 1 (2.5) 1 Anode 2 Cathode Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit IF 75 mA Forward current Reverse voltage VR 5 V Power dissipation PD 100 mW Pulse forward current IFP∗ 500 mA Operating temperature Topr −25 to +85 °C Storage temperature Tstg −40 to +85 °C ∗ Pulse width=0.1msec, duty ratio 1% Electrical and optical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Optical output PO − 8.4 − mW IF=50mA Emitting strength IE 5.6 18.1 − mW/sr IF=50mA Forward voltage VF − 1.3 1.5 V IF=50mA Reverse current IR − − 10 μA VR=3V Peak light emitting wavelength λP − 940 − nm IF=50mA Spectral line half width Δλ − 40 − nm IF=50mA Half-viewing angle θ1 / 2 − ±16 − deg IF=50mA Response time tr·tf − 1.0 − μs IF=50mA fC − 1.0 − MHz IF=50mA Cut-off frequency www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/2 2010.06 - Rev.B SIR-341ST3F Data Sheet Electrical and optical characteristic curves 100 FORWARD CURRENT : IF (mA) 60 40 20 0 0 20 40 60 80 −25°C 0°C 25°C 50°C 75°C 40 30 20 10 Fig.2 Forward current vs. forward voltage RELATIVE EMITTING STRENGTH : IE (%) EMITTING STRENGTH : IE (mW/sr) 40 30 20 10 20 40 60 80 100 10 −20 0 20 40 60 0° 80 50° 60 60° 40 70° 20 80° 40 20 980 Fig.3 Wavelength 100 40° 60 960 80 Fig.5 Relative emitting strength vs.ambient temperature 80 940 20 Fig.4 Emitting strength vs. forward current RELATIVE EMITTING STRENGTH (%) 920 50 30° 90° 100 900 100 AMBIENT TEMPERATURE : Ta (°C) 10° 20 200 FORWARD CURRENT : IF (mA) 20° 40 OPTICAL WAVELENGTH : λ (nm) FORWARD VOLTAGE : VF (V) 50 0 0 2 1 AMBIENT TEMPERATURE : Ta (°C) Fig.1 Forward current falloff 60 0 0 0 100 80 RELATIVE EMITTING STRENGTH (%) FORWARD CURRENT : IF (mA) 80 RELATIVE OPTICAL OUTPUT : PO (%) 100 50 0 10° 20° 30° 40° 50° 60° 70° 80° 90° ANGULAR DISPLACEMENT : θ (deg) Fig.6 Directional pattern www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 2/2 2010.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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