SCS120KE2 SiC Schottky Barrier Diode SCS120KE2 . Dimensions (Unit : mm) Applications General rectification Structure Case Case 1.98 5.03 20.95 3.61 3.81 5.62 6.17 15.90 Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible 4.32 (1) (2) (3) 2.40 20.18 3.00 Construction Silicon carbide epitaxial planer type 0.60 1.20 5.45 2.03 (Unit : mm) (1) Anode (2) Cathode (3) Anode ROHM : ＴO-247 Absolute maximum ratings (Tj=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward forward current *6 Symbol VRM VR IF Surge no repetitive forward current *6 IFSM Repetitive peak forward current *6 6 Total power disspation * Junction temperature Range of storage temperature 6 Limits 1200 1200 Unit V V A A A A W °C °C °C / W 1 10/ 20 * 45 / 90 *2 190 / 380*3 30 / 58*4 5 115 / 210* 175 IFRM PD Tj Tstg Rth(j-c) 55 to 175 1.3 / 0.70 Junction to case * (*1)Tc=135°C / 132°C (*2)PW=8.3ms sinusoidal,Tj=25°C (*3)PW=10s square,Tj=25°C (*4)Tc=120°C,Tj=150°C,Duty cycle=10% (*5)Tc=25°C (*6)Per Leg / Per Device Electrical characteristics (Tj=25°C) [Per Leg] Parameter Symbol Min. DC blocking voltage 1200 - - V IR=0.2mA - 1.50 1.70 V IF=10A,Tj=25°C - 2.00 - V - 10 120 650 200 - μA μA pF IF=10A,Tj=175°C VR=1200V,Tj=25°C VR=1200V,Tj=175°C VR=1V,f=1MHz - 50 34 16 - pF nC ns VR=800V,f=1MHz VR=800V,di/dt=500A/μs VR=800V,di/dt=500A/μs VDC Forward voltage VF Reverse current IR Total capacitance C Total capacitive charge Switching time Qc tc www.rohm.com ©2012 ROHM Co., Ltd. All rights reserved. 1/3 Typ. Max. Conditions Unit 2012.04 - Rev.A DataSheet SCS120KE2 Electrical characteristic curves (Ta=25C) Fig.2 VF-IF Characteristics [Per Leg] Fig.1 VF-IF Characteristics [Per Leg] 100 15 pulsed pulsed Ta=-25℃ FORWARD CURRENT: IF(A) FORWARD CURRENT: IF(A) 10 Ta= 175℃ 1 Ta= 125℃ Ta= 75℃ 0.1 Ta= 25℃ 0.01 Ta= 25℃ 10 Ta= 175℃ 5 Ta= 125℃ Ta= 75℃ Ta=-25℃ 0.001 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 FORWARD VOLTAGE : VF (V) 1.5 2.0 2.5 FORWARD VOLTAGE : VF (V) Fig.4 VR-Ct Characteristics [Per Leg] Fig.3 VR-IR Characteristics [Per Leg] 10,000 100 CAPACITANCE BETWEEN TERMINALS : Ct [pF] Ta= 175℃ Ta= 125℃ 10 REVERSE CURRENT (μA) 1.0 Ta= 75℃ 1 0.1 0.01 Ta= 25℃ 0.001 Ta=-25℃ 0.0001 0 200 400 600 800 1,000 Ta=25℃ f=1MHz 1,000 100 10 0.01 1,200 0.1 1 10 100 1000 REVERSE VOLTAGE : VR [V] REVERSE VOLTAGE: VR (V) Fig.6 Power Dissipation Fig.5 Thermal Resistance vs Pulse Width 250 10 200 1 Power Dissipation (W) Thermal Resistance : （℃/W） Ta=25℃ Single Pulse 0.1 150 100 50 0.01 0.0001 0.001 0 0.01 0.1 Pulse width 1 10 100 0 1000 ： Pw （ s ） www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 25 50 75 100 CASE TEMPERATURE 2/3 125 150 175 ： Tc (℃) 2012.04 - Rev.A DataSheet SCS120KE2 Fig.8 Io-Pf Characteristics Fig.7 Derating Curve Ip-Tc 140 120 Duty=0.2 120 80 POWER DISSIPATION (W) PEAK FORWARD CURRENT (A) Duty=0.1 100 Duty=0.2 60 Duty=0.5 40 Duty=0.8 20 0 25 50 75 100 D.C. 80 60 Duty=0.8 40 20 D.C. 0 Duty=0.5 Duty=0.1 100 CASE TEMPERATURE www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 125 150 0 175 0 5 10 15 20 25 30 35 AVERAGE RECTIFIED FORWARD CURRENT : Io (A) ： Tc (℃) 3/3 2012.04 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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