ROHM 1SS380_11

Switching Diode
1SS380
Dimensions (Unit : mm)
Applications
High speed switching
Land size figure (Unit : mm)
0.1±0.1
0.05
0.9MIN.
2.5±0.2
1.7±0.1
Features
1)Ultra small mold type. (UMD2)
2)High reliability
2.1
0.8MIN.
1.25±0.1
UMD2
Construction
Silicon epitaxial planar
0.7±0.2
0.1
0.3±0.05
Structure
ROHM : UMD2
JEDEC : SOD-323
JEITA : SC-90/A
dot (year week factory)
Taping dimensions (Unit : mm)
2.0±0.05
φ1.55±0.05
0.3±0.1
4.0±0.1
1.40±0.1
2.8±0.1
2.75
8.0±0.2
3.5±0.05
1.75±0.1
4.0±0.1
φ1.05
1.0±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive peak)
VR
Reverse voltage (DC)
IFM
Forward current
Average rectified forward current
Io
Isurge
Surge current (t=1s)
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
Capacitance between terminals
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Limits
Unit
V
V
mA
mA
mA
C
C
40
35
225
100
400
150
55 to 150
Min.
Typ.
Max.
Unit
-
-
1.2
V
IF=100mA
VR=20V
VR=0.5V , f=1MHz
IR
-
-
0.01
μA
Ct
-
-
5.0
pF
1/2
Conditions
2011.08 - Rev.C
Data Sheet
1SS380
100
10
Ta=150℃
100
f=1MHz
10
1
Ta=25℃
Ta=25℃
Ta=150℃
Ta=75℃
1
Ta=25℃
0.1
0.01
Ta=25℃
0.001
0.1
0.0001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
970
950
940
930
AVE:940.0mV
0
150
100
50
7
6
5
4
3
2
1
AVE:3.24pF
IR DISPERSION MAP
Ct DISPERSION MAP
5
1cyc
8.3ms
AVE:9.60A
20
Ta=25℃
VR=6V
IF=10mA
RL=100Ω
Irr=0.1*IR
n=10pcs
4
3
PEAK SURGE
FORWARD CURRENT : I FSM(A)
REVERSE RECOVERY TIME:trr(ns)
Ifsm
5
8
0
VF DISPERSION MAP
15
2
1
Ifsm
15
8.3ms
10
5
0
0
1
IFSM DISPERSION MAP
trr DISPERSION MAP
20
15
10
5
100
Rth(j-c)
Mounted on epoxy board
IM=1mA
10
1ms
IF=50mA
time
0.1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
25
20
15
10
0.001
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/2
100
1000
AVE:5.1kV
AVE:3.70kV
5
300us
1
0
100
Rth(j-a)
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
t
TRANSIENT
THAERMAL IMPEDANCE : Rth (℃/W)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
Ifsm
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
30
1000
25
8.3ms
1cyc
AVE:1.20ns
0
30
30
Ta=25℃
f=1MHz
VR=0V
n=10pcs
9
0
10
10
20
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
10
Ta=25℃
VR=20V
n=30pcs
AVE:40.51pA
920
PEAK SURGE
FORWARD CURRENT : I FSM(A)
20
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT: IR(pA)
960
5
10
15
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
200
Ta=25℃
IF=100mA
n=30pcs
1
0.1
0
FORWARD VOLTAGE : VF(V)
VF-IF CHARACTERISTICS
FORWARD VOLTAGE : V F(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125℃
Ta=75℃
10
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : I F(mA)
Ta=125℃
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
2011.08 - Rev.C
Notice
Notes
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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R1120A