2SA821S Transistors High-voltage Amplifier Transistor (−210V, −30mA) 2SA821S zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, (VCER = −210V ) 2) Complements the 2SC1651S. SPT 2.0 (15Min.) 3Min. 3.0 4.0 0.45 2.5 0.5 0.45 5.0 (1) (2) (3) (1)Emitter (2)Collector Taping specifications (3)Base zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol Limits Unit VCBO VCES −210 −210 VEBO IC −5 −30 V V V A PC Tj 250 150 Tstg −55 to +150 ∗ W °C °C ∗ RBE=10kΩ zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Parameter BVCBO BVCEO BVEBO −210 −210 −5 − − − − − − V V V IC= −50µA IC= −100µA, RBE=10kΩ IE= −50µA Conditions Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage ICBO IEBO VCE(sat) − − − − − − − −1 −1 µA µA V VCB= −150V VEB= −4.5V IC/IB= −2mA/−0.2mA DC current transfer ratio hFE 82 − −1 − Transition frequency fT − 50 270 MHz Output capacitance Cob − 8 − pF VCE= −3V, IC= −5A VCE= −5V , IE=2mA , f=30MHz VCE= −10V , IE=0A , f=1MHz zPackaging specifications and hFE Type 2SA821S Package hFE SPT PQ Code Basic ordering unit (pieces) TP 5000 Rev.A 1/2 2SD1834 Transistors Ta=25°C VCE=−5V −10 COLLECTOR CURRENT : IC (mA) −5 −2 −1 −0.5 −20 Ta=25°C −120µA −100µA −80µA −60µA −10 −40µA −20µA Ta=25°C −20 0µA −20 0µA −18 160µA − µA −140 µA −120 −100µA −16 −80µA −12 −60µA −8 −40µA −4 −20µA −0.2 −0.1 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 0 0 −1.4 Ta=25°C VCE= −3V DC CURRENT GAIN : hFE 200 100 50 20 10 5 2 1 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) −16 0 0 −20 −0.4 −0.8 −1.2 −1.6 −2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1000 Ta=25°C IC/IB=10 −1000 −500 −200 −100 −50 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current 100 −12 Fig.2 Ground emitter output characteristics ( Ι ) Fig.3 Ground emitter output characteristics ( ΙΙ ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Fig.1 Ground emitter propagation characteristics 500 −8 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) 1000 −4 Fig.5 Collector-emitter saturation voltage vs. collector current TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : Ic (mA) −20 COLLECTOR CURRENT : IC (mA) zElectrical characteristics curves Ta=25°C VCE= −5V 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 EMITTER CURRENT : IE (mA) Fig.6 Gain bandwidth product vs. emitter current Ta=25°C f=1MHz IE=0A IC=0A 50 Cib 20 10 5 Cob 2 1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Emitter input capacitance vs. emitter-base voltage Collector output capacitance vs. collector-base voltage Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1