2SD1383K Transistors High-gain Amplifier Transistor (32V , 0.3A) 2SD1383K zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD852. 2SD1383K 2.9 1.1 0.4 0.8 (3) 2SD1383K SMT3 B Marking W∗ Code Basic ordering unit (pieces) T146 3000 (2) (1) 0.95 0.95 0.15 1.9 0.3Min. Type Package hFE 1.6 2.8 zPackaging specifications (1)Emitter (2)Base Each lead has same dimensions (3)Collector ∗ Denotes hFE zCircuit diagram C B RBE 4kΩ E : Emitter B : Base C : Collector E zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO Collector current Collector power dissipation Junction temperature Storage temperature IC PC Tj Tstg Limits 40 32 6 0.3 1.5 0.2 150 −55 to +150 Unit V ∗1 V V A (DC) A (Pulse) ∗2 W °C °C ∗1 RBE=0Ω ∗2 Single pulse Pw=10ms zElectrical characteristics (Ta=25°C) Parameter Collector cutoff current Emitter cutoff current DC current transfer ratio Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Collector-emitter saturation voltage Transition frequency Output capacitance VCE(sat) fT Cob Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Min. 40 32 6 − − 5000 − − − Typ. − − − − − − − 250 3 Max. − − − 1 1 − 1.5 − − Unit V V V µA µA − V MHz pF Conditions IC=100µA IC= −1mA , RBE=0Ω IE=100µA VCB=24V VEB=4.5V VCE=5V, IC=0.1A IC=200mA, IB=0.4mA ∗1 VCE=5V, IE= −10mA, f=100MHz ∗2 VCB=10V, IE=0A, f=1MHz ∗1 Measured using pulse current. ∗2 Transition frequency of the device. Rev.B 1/2 2SD1383K Transistors zElectrical characteristic curves 500 25 50 20 10 5 0 75 100 125 0 150 0.4 0.8 1.2 1.6 2.0 2.4 2.8 9µA 8µA 7µA 50 6µA 5µA 4µA BASE TO EMITTER VOLTAGE : VBE (V) VCE=5V Ta=25°C 5V 20000 10000 5000 VCE=3V 2000 DC CURRENT GAIN : hFE 50000 1000 100000 °C 00 =1 Ta °C 25 50000 C −55° 20000 10000 5000 500 10 20 50 100 200 500 1000 2000 5 COLLECTOR CURRENT : IC (mA) 200 100 50 −1 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) Fig.7 Gain bandwidth product vs. emitter current 50 100 200 500 1000 2000 Ta=25°C f=1MHz IE=0A 20 10 5 2 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.8 Collector output capacitance vs. collector-base voltage 4 5 IC/IB=500 2 Ta= −55°C 1 0.5 100°C 25°C 0.2 0.1 0.5 1 2 5 100 200 500 1000 2000 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current Fig.5 DC current gain vs. collector current ( ΙΙ ) OUTPUT CAPACITANCE : Cob (pF) 500 20 3 Fig.3 Ground emitter output characteristics COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Ta=25°C VCE=6V 10 3µA 2 1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Ground emitter propagation characteristisc Fig.1 Power dissipation curves 5 0 0 3.2 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 50 EMITTER INPUT CAPACITANCE : Cib (pF) 25 AMBIENT TEMPERATURE : Ta (°C) DC CURRENT GAIN : hFE Ta=25°C IB=10µA 2 0 0 TRANSISION FREQUWNCY : fT (MHz) 100 COLLECTOR CURRENT : IC (mA) 50 100 Ta= −55°C 75 200 Ta=100°C 100 VCE=6V Ta=25°C COLLECTOR CURRENT : IC (mA) POWER DISSIPATION : PC/PCMax (%) 125 20 Ta=25°C f=1MHz IE=0A 10 5 2 1 1 2 5 10 EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Emitter input capacitance vs. emitter-base voltage Rev.B 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1