ROHM 2SD2264

2SD2264
Transistors
Low Frequency Transistor (20V, 3A)
2SD2264
zExternal dimensions (Unit : mm)
zFeatures
1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.)
(IC / IB = 2A / 0.1A)
2) Excellent current gain characteristics.
2SD2264
2.5±0.2
0.65Max.
zStructure
Epitaxial planar type
NPN silicon transistor
0.5±0.1
(1)
(2)
4.4±0.2
14.5±0.5
1.0
0.9
6.8±0.2
(3)
2.54 2.54
1.05
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
∗ Denotes hFE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
3
A (DC)
5
A (Pulse)
Collector current
IC
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1
∗2
∗1
∗2
Single pulse Pw=10ms
Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
Rev.A
1/3
2SD2264
Transistors
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Collector-base breakdown voltage
BVCBO
40
−
−
V
IC=50µA
Collector-emitter breakdown voltage
BVCEO
20
−
−
V
IC=1mA
Emitter-base breakdown voltage
BVEBO
6
−
−
V
IE=50µA
ICBO
−
−
0.1
µA
VCB=30V
Parameter
Collector cutoff current
Unit
Conditions
IEBO
−
−
0.1
µA
VEB=5V
VCE(sat)
−
0.2
0.5
V
IC/IB=2A/0.1A
hFE
180
−
390
−
VCE=2V, IC=0.1A
Transition frequency
fT
−
290
−
MHz
Output capacitance
Cob
−
25
−
pF
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
∗
∗
VCE=2V, IE= −0.5A, f=100MHz
VCE=10V, IE=0A, f=1MHz
Measured using pulse current.
zPackaging specifications and hFE
Package
Type
hFE
2SD2264
R
Taping
Code
TV2
Basic ordering
unit (pieces)
2500
hFE values are classified as follows :
Item
R
hFE
180 to 390
zElectrical characteristic curves
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
2
VCE=2V
5
2
1
0.5
0.2
Ta=100°C
25°C
−40°C
0.1
0.05
0.02
0.01
5m
2m
1m
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1
Grounded emitter propagation
characteristics
Ta=25°C
12mA
10mA
8mA
20mA
18mA
16mA
14mA
1.6
6mA
1.2
4mA
0.8
2mA
0.4
0
0
0.2
0.4
0.6
0.8
IB=0A
1.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2
Grounded emitter output
characteristics ( )
5
COLLECTOR CURRENT : IC (A)
10
Ta=25°C
35mA
30mA
25mA
20mA
50mA
45mA
40mA
4
15mA
3
10mA
2
5mA
1
0
0
IB=0A
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3
Grounded emitter output
characteristics ( )
Rev.A
2/3
2SD2264
DC CURRENT GAIN : hFE
Ta=100°C
25°C
−40°C
1000
500
200
100
50
20
10
5
1m 2m 5m0.010.02 0.05 0.10.2 0.5 1 2
5 10
2
IC/IB=10
1
0.5
0.2
Ta=100°C
25°C
−40°C
0.1
50m
20m
10m
5m
2m
1m 2m 5m10m20m50m0.1 0.2 0.5 1 2
COLLECTOR CURRENT : IC (A)
DC current gain vs.
collector current
2
Fig.5
IC/IB=20
1
0.5
0.2
Ta=100°C
25°C
−40°C
0.1
50m
20m
10m
5m
2m
1m 2m 5m10m20m50m 0.1 0.2 0.5 1 2
Collector-emitter
saturation voltage vs.
collector current ( )
lC/lB=20
Ta=100°C
25°C
−40°C
0.2
0.1
0.05
0.02
0.01
5m
2m
1m
1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2
5 10
200
100
50
20
10
5
2
1
−1
Fig.6
Collector-emitter
saturation voltage vs.
collector current ( )
Ta=25°C
VCE=2V
500
−2
−5 −10 −20 −50−100 −200 −500 −1000
EMITTER CURRENT : IE (mA)
Fig.8
Gain bandwidth product vs.
emitter current
5 10
COLLECTOR CURRENT : IC (A)
Collector-emitter
saturation voltage vs.
collector current ( )
1000
1000
COLLECTOR CURRENT : IC (A)
Fig.7
1
0.5
COLLECTOR CURRENT : IC (A)
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Fig.4
5 10
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
VCE=2V
2000
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
5000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Transistors
Ta=25°C
f=1MHz
IE=0A
IC=0A
500
Cob
200
100
Cob
50
20
10
0.1 0.2
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Rev.A
3/3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1