2SB1197K Transistors Low Frequency Transistor (32V, 0.8A) 2SB1197K zExternal dimensions (Unit : mm) 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (3) All terminals have the same dimensions 0.4 +0.1 −0.05 zStructure Epitaxial planar type PNP silicon transistor ROHM : SMT3 EIAJ : SC-59 ∗ 0~0.1 2.8±0.2 0.2 1.6+ −0.1 (1) (2) +0.1 0.15 −0.06 Abbreviated symbol: AH 0.3∼0.6 zFeatures 1) Low VCE(sat). VCE(sat) ͟ 0.5V ̈́IC / IB= 0.5A / 50mAͅ 2) IC = 0.8A. 3) Complements the 2SD1781K. ∗ (1) Emitter (2) Base (3) Collector Denotes hFE zAbsolute maximum ratings (Ta=25qC) Parameter Symbol Limits Unit Collector-base voltage VCBO −40 V Collector-emitter voltage VCEO −32 V Emitter-base voltage VEBO −5 V Collector current IC −0.8 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C zElectrical characteristics (Ta=25qC) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −40 − − V IC= −50μA Collector-emitter breakdown voltage BVCEO −32 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE= −50μA ICBO − − −0.5 μA VCB= −20V Parameter Collector cutoff current Conditions IEBO − − −0.5 μA VEB= −4V VCE(sat) − − −0.5 V IC/IB= −0.5A/ −50mA hFE 120 − 390 − VCE= −3V, IC= −100mA Transition frequency fT − 200 − MHz Output capacitance Cob − 12 30 pF Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio VCE= −5V, IE=50mA, f=100MHz VCB= −10V, IE=0A, f=1MHz Rev.A 1/2 2SB1197K Transistors zElectrical characteristic curves zPackaging specifications and hFE Type hFE 2SB1197K QR Code T146 Basic ordering unit (pieces) 3000 COLLECTOR CURRENT : IC (mA) Taping Package hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 −1000 −500 Ta=25°C VCE=6V −200 −100 −50 −20 −10 −5 −2 −1 −0.5 −0.2 −0.1 0 −0.4 −0.8 −1.2 −1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 −160 −500 −0.8mA −140 −0.7mA −120 −0.6mA −100 −0.5mA −80 −0.4mA −60 −0.3mA −0.2mA −40 −0.1mA −20 −4 −8 −12 −16 −0.2 −0.4 −0.6 −200 −100 IC/IB=50 20 10 −10 −5 −2 −10m −100m Collector-emitter saturation voltage vs. collector current 20 10 5 −1 Ta=25°C −0.8 −1.0 Ta=25°C VCE= −5V 500 200 100 50 20 10 5 2 1 1m COLLECTOR CURRENT : IC (A) Fig.5 VCE= −3V −2V −1V 50 1 −1m 10m 100m 1 Fig.4 Gain bandwidth product vs. emitter current −100m −1 DC current gain vs. collector current 1000 Ta=25°C f=1MHz IE=0A 500 200 100 EMITTER CURRENT : IE (A) Fig.6 −10m COLLECTOR CURRENT : IC (A) Grounded emitter output characteristics ( ) 1000 −1 −1m 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Ta=25°C −20 200 2 0 0 TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) mA IB= −2 −100 −20 −500 −50 A −4m −200 Grounded emitter output characteristics ( ) −1000 − −300 Ta=25°C 500 A COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 mA 10mA −12 − 8mA −6m IB=0mA 0 0 1k −14mA −16mA −18mA −400 −20mA DC CURRENT GAIN : hFE A −1.0m −0.9mA COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25°C −180 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −200 Grounded emitter propagation characteristics Cib 50 Cob 20 10 5 2 1 −0.1 −1 −10 −100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1