BCR2PM-12 Triac Low Power Use REJ03G0300-0100 Rev.1.00 Aug.20.2004 Features • IT (RMS) : 2 A • VDRM : 600 V • IRGTI, IRGTⅢ : 10 mA • Non-Insulated Type • Planar Passivation Type Outline TO-220F 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Electric rice cooker, electric pot, and controller for other heater Precautions on Usage When the BCR2PM-12 is used, do not attach the heat radiating fin. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.1.00, Aug.20.2004, page 1 of 6 Symbol Voltage class 12 Unit VDRM VDSM 600 720 V V BCR2PM-12 Parameter RMS on-state current Symbol IT (RMS) Ratings 2 Unit A Surge on-state current ITSM 10 A I2 t 0.41 A2s PGM PG (AV) VGM IGM Tj Tstg — 1 0.1 6 1 – 40 to +125 – 40 to +125 2.0 W W V A °C °C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1. Gate open. Conditions Commercial frequency, sine full wave 360° conduction 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 Symbol IDRM VTM Min. — — Typ. — — Max. 0.5 1.6 Unit mA V Test conditions Tj = 125°C, VDRM applied Tj = 25°C, ITM = 1.5 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω ΙΙ VRGTΙ — — 2.0 V ΙΙΙ VRGTΙΙΙ — — 2.0 V ΙΙ IRGTΙ — — 10 mA ΙΙΙ IRGTΙΙΙ — — 10 mA VGD Rth (j-a) 0.1 — — — — 40 V °C/W Gate non-trigger voltage Thermal resistance Notes: 2. Measurement using the gate trigger characteristics measurement circuit. Rev.1.00, Aug.20.2004, page 2 of 6 Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2 VDRM Junction to ambient, Natural convection BCR2PM-12 Performance Curves 102 7 Tj = 25°C 5 3 2 Surge On-State Current (A) 10 101 7 5 3 2 0 10 7 5 3 2 –1 Gate Voltage (V) 0 10 7 5 3 2 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 10 7 6 5 4 3 2 1 2 3 5 7 10 1 2 3 5 7 10 Conduction Time (Cycles at 60Hz) Gate Characteristics (II and III) Gate Trigger Current vs. Junction Temperature PGM = 1W VGM = 6V PG(AV) = 0.1W VGT IGM = 1A IRGT I, IRGT III –1 7 VGD = 0.1V 5 0 1 10 2 3 5 710 2 3 5 7102 2 3 5 7103 103 7 5 8 On-State Voltage (V) 3 2 101 7 5 3 2 9 0 0 10 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) 10 Rated Surge On-State Current 103 7 5 2 Typical Example 3 2 IRGT I, IRGT III 102 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Typical Example 3 2 VRGT I 102 7 5 VRGT III 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Rev.1.00, Aug.20.2004, page 3 of 6 Transient Thermal Impedance (°C/W) On-State Current (A) Maximum On-State Characteristics 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 1 ( 2 Natural Convection No Fins Print Board t = 1.6mm Solder Land : φ 2mm 3 ) 4 10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 7105 Conduction Time (Cycles at 60Hz) BCR2PM-12 Allowable Ambient Temperature vs. RMS On-State Current 160 1.6 140 1.4 360° Conduction 1.2 Resistive, inductive loads 1.0 0.8 0.6 0.4 0.2 120 100 80 Natural Convection No Fins Print Board t = 1.6mm Solder Land : φ 2mm Curves apply regardless of conduction angle Resistive, inductive loads ( ) 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 105 7 5 3 2 Typical Example 104 7 5 3 2 103 7 5 3 2 2 10 –60 –40–20 0 20 40 60 80 100 120 140 102 7 5 3 2 Typical Example 3 2 102 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Latching Current vs. Junction Temperature Breakover Voltage vs. Junction Temperature Distribution T2+, G– Typical Example 0 10–1 –40 3 10 7 5 Junction Temperature (°C) 101 7 5 3 2 10 7 5 3 2 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) 0 0 Latching Current (mA) Ambient Temperature (°C) 1.8 T2–, G– Typical Example 0 40 80 120 Junction Temperature (°C) Rev.1.00, Aug.20.2004, page 4 of 6 160 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40–20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Gate Trigger Current vs. Gate Current Pulse Width Breakover Voltage vs. Rate of Rise of Off-State Voltage Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) BCR2PM-12 160 Typical Example Tj = 125°C 140 120 I Quadrant 100 80 60 III Quadrant 40 20 0 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 Gate Trigger Characteristics Test Circuits 6Ω A 6V V 330Ω Test Procedure II Rev.1.00, Aug.20.2004, page 5 of 6 A 6V V Typical Example IRGT I 3 2 102 7 5 IRGT III 3 2 1 10 0 10 2 3 5 7 101 2 3 5 7 102 Gate Current Pulse Width (µs) Rate of Rise of Off-State Voltage (V/µs) 6Ω 3 10 7 5 330Ω Test Procedure III BCR2PM-12 Package Dimensions TO-220F EIAJ Package Code JEDEC Code Conforms Mass (g) (reference value) Lead Material 2.0 Cu alloy 10.5 max 2.8 17 8.5 5.0 1.2 5.2 3.6 φ 3.2 ± 0.2 13.5 min 1.3 max 0.8 0.5 2.54 2.6 Symbol 4.5 2.54 Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 100 Type name +RA Lead form Plastic Magazine (Tube) 50 Type name +RA – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 Standard order code example BCR2PM-12RA BCR2PM-12RA-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. 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