CR05AM-16 Thyristor Low Power Use REJ03G0356-0100 Rev.1.00 Aug.20.2004 Features • IT (AV) : 0.3 A • VDRM : 800 V • IGT : 100 µA • Non-Insulated Type • Glass Passivation Type Outline TO-92 2 1. Cathode 2. Anode 3. Gate 3 1 3 2 1 Applications Leakage protector, timer, and gas igniter Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 DC off-state voltageNote1 Rev.1.00, Aug.20.2004, page 1 of 7 Symbol Voltage class 16 Unit VRRM VRSM VR(DC) VDRM VDSM VD(DC) 800 960 640 800 960 640 V V V V V V CR05AM-16 Parameter RMS on-state current Average on-state current Symbol IT (RMS) IT (AV) Ratings 0.47 0.3 Unit A A ITSM 10 A I2 t 0.4 A2s Surge on-state current I2t for fusing Peak gate power dissipation PGM 0.5 Average gate power dissipation PG (AV) 0.1 Peak gate forward voltage VFGM 6 Peak gate reverse voltage VRGM 6 Peak gate forward current IFGM 0.3 Junction temperature Tj – 40 to +110 Storage temperature Tstg – 40 to +125 Mass — 0.23 Notes: 1. With gate to cathode resistance RGK = 1 kΩ. W W V V A °C °C g Conditions Commercial frequency, sine half wave 180° conduction, Ta = 47°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Repetitive peak reverse current Repetitive peak off-state current IRRM IDRM — — — — 0.1 0.1 mA mA On-state voltage VTM — — 1.8 V Gate trigger voltage VGT — — 0.8 V Tj = 25°C, VD = 6 V, IT = 0.1 ANote2 Gate non-trigger voltage VGD 0.2 — — V Tj = 110°C, VD = 1/2 VDRM, RGK = 1 kΩ Gate trigger current IGT 1 — 100 µA Tj = 25°C, VD = 6 V, IT = 0.1 ANote2 Holding current IH — 1.5 3 mA Tj = 25°C, VD = 12 V, RGK = 1 kΩ — — 180 °C/W Thermal resistance Rth (j-a) Notes: 2. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 RGK 1 1kΩ Switch 2 60Ω TUT V1 6V DC VGT Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) Rev.1.00, Aug.20.2004, page 2 of 7 Test conditions Tj = 110°C, VRRM applied Tj = 110°C, VDRM applied, RGK = 1 kΩ Ta = 25°C, ITM = 4 A, instantaneous value Junction to ambient CR05AM-16 Performance Curves 101 7 5 3 2 Rated Surge On-State Current 10 Ta = 25°C Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 100 7 5 3 2 10–1 7 5 3 2 VGD = 0.2V IFGM = 0.3A 10–2 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 1022 3 5 3 2 1 2 3 4 5 7 101 2 3 4 5 7 102 × 100 (%) 103 7 5 3 2 Typical Example 102 7 5 3 2 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 1.0 0.9 Gate Trigger Voltage (V) Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 10–1 Distribution 0.7 Typical Example IGT (25°C) = 35µA 0.5 0.4 0.3 0.2 0.1 0 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Rev.1.00, Aug.20.2004, page 3 of 7 Transient Thermal Impedance (°C/W) Gate Voltage (V) PGM = 0.5W 100 0.6 4 Gate Trigger Current vs. Junction Temperature PG(AV) = 0.1W VGT = 0.8V (Tj = 25°C) IGT = 100µA (Tj = 25°C) 0.8 5 Gate Characteristics VFGM = 6V 7 5 3 2 6 Conduction Time (Cycles at 60Hz) 101 7 5 3 2 7 On-State Voltage (V) 102 7 5 3 2 8 0 100 10–2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 7 5 3 2 9 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 180 160 140 120 100 80 60 40 20 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 Time (s) CR05AM-16 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 θ = 30° 0.3 0.2 θ 360° 0.1 Resistive, inductive loads 0 0 0.1 0.2 0.4 0.3 θ 120 360° Resistive, inductive loads Natural convection 100 80 60 40 θ = 30° 90° 180° 60° 120° 20 0 0.5 0 0.1 0.2 0.3 0.5 0.4 Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 60° θ = 30° 0.4 90° 120° 160 180° 0.3 0.2 θ 0.1 0 θ 360° Ambient Temperature (°C) Average Power Dissipation (W) 140 Average On-State Current (A) 0.5 Resistive loads 0 0.1 0.2 0.3 0.4 140 θ 120 360° Resistive loads Natural convection 100 80 60 40 20 0 0.5 θ θ = 30° 60° 90° 120° 180° 0 0.1 0.2 0.3 0.4 0.5 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 0.5 Average Power Dissipation (W) Ambient Temperature (°C) 0.4 180° 120° 90° 60° 0.4 θ = 30° 270° 180° 120° 90° DC 60° 0.3 0.2 θ 360° 0.1 Resistive, inductive loads 0 0 0.1 0.2 0.3 0.4 Average On-State Current (A) Rev.1.00, Aug.20.2004, page 4 of 7 0.5 160 Ambient Temperature (°C) Average Power Dissipation (W) 0.5 Resistive, inductive loads Natural convection 140 θ 360° 120 θ = 30° 60° 100 90° 120° 180° 270° DC 80 60 40 20 0 0 0.1 0.2 0.3 0.4 Average On-State Current (A) 0.5 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 160 Typical Example Tj = 110°C 140 120 100 80 60 40 20 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Gate to Cathode Resistance (kΩ) Breakover Voltage vs. Rate of Rise of Off-State Voltage Holding Current vs. Junction Temperature RGK = 1kΩ 180 160 140 120 100 Tj = 25°C 80 40 Breakover Voltage vs. Gate to Cathode Resistance Junction Temperature (°C) 200 60 Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 1kΩ) RGK = 1kΩ Typical Example Tj = 110°C Holding Current (mA) 160 20 102 7 5 3 2 101 7 5 3 2 RGK = 1kΩ Distribution Typical Example IGT(25°C) = 35µA 100 7 5 3 2 10–1 –60 –40 –20 0 20 40 60 80 100 120 140 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Junction Temperature (°C) Holding Current vs. Gate to Cathode Resistance Repetitive Peak Reverse Voltage vs. Junction Temperature 500 400 300 Typical Example IGT(25°C) IH(1kΩ) 10µA 1.0mA #1 26µA 1.1mA #2 #1 #2 200 100 VD = 12V, Tj = 25°C 0 10–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 Gate to Cathode Resistance (kΩ) Rev.1.00, Aug.20.2004, page 5 of 7 × 100 (%) Rate of Rise of Off-State Voltage (V/µs) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) × 100 (%) Breakover Voltage (dv/dt = vV/µs) Breakover Voltage (dv/dt = 1V/µs) × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 100 (%) Breakover Voltage vs. Junction Temperature × 100 (%) CR05AM-16 160 Typical Example 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 Junction Temperature (°C) CR05AM-16 Gate Trigger Current (µA) Gate Trigger Current vs. Gate Current Pulse Width 104 7 5 4 3 2 Typical Example IGT(DC) # 1 16µA # 2 65µA #1 103 7 5 4 3 2 #2 Tj = 25°C 102 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) Rev.1.00, Aug.20.2004, page 6 of 7 CR05AM-16 Package Dimensions TO-92 EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material Conforms Conforms 0.23 Cu alloy φ 5.0 max 11.5 min 5.0 max 4.4 1.25 1.25 3.6 1.1 Circumscribed circle φ 0.7 Symbol Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 500 Type name Lead form Vinyl sack 500 Type name – Lead forming code Form A8 Taping 2000 Type name – TB Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 7 of 7 Standard order code example CR05AM-16 CR05AM-16-A6 CR05AM-16-TB Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 © 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .1.0