BCR3PM-12L Triac Low Power Use REJ03G0301-0200 Rev.2.00 Nov.08.2004 Features • • • • • Insulated Type • Planar Passivation Type • UL Recognized : Yellow Card No. E223904 File No. E80271 IT (RMS) : 3 A VDRM : 600 V IFGTI, IRGTI, IRGT : 20 mA (10 mA)Note5 Viso : 2000 V Outline TO-220F 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Contactless AC switch, light dimmer, electric blanket, control of household equipment such as electric fan, solenoid driver, small motor control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.2.00, Nov.08.2004, page 1 of 6 Symbol Voltage class 12 Unit VDRM VDSM 600 720 V V BCR3PM-12L Parameter RMS on-state current Symbol IT (RMS) Ratings 3.0 Unit A Surge on-state current ITSM 30 A I2 t 3.7 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 3 0.3 6 0.5 – 40 to +125 – 40 to +125 2.0 2000 W W V A °C °C g V Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.5 Unit mA V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc = 107°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 4.5 A, Instantaneous measurement Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger currentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 20Note5 20Note5 20Note5 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD Rth (j-c) 0.2 — — — — 4.5 V °C/W Gate non-trigger voltage Thermal resistance Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 5 — — V/µs Tj = 125°C Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT ≤ 10 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = –1.5 A/ms 3. Peak off-state voltage VD = 400 V Rev.2.00, Nov.08.2004, page 2 of 6 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR3PM-12L Performance Curves 102 7 Tj = 25°C 5 3 2 Surge On-State Current (A) 100 7 5 3 2 –1 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 20 15 10 5 2 3 5 7 10 1 2 3 5 7 10 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature PGM = 3W PG(AV) = 0.3W IGM = 0.5A VGT 0 IRGT I IFGT I, IRGT III VGD = 0.2V 10–1 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 103 7 5 3 2 2 Typical Example IRGT III 102 I I 7 FGT I, RGT I 5 3 2 1 10 –60 –40–20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 3 10 7 5 Typical Example 3 2 2 10 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Rev.2.00, 25 Conduction Time (Cycles at 60Hz) 1 10 7 5 3 2 30 On-State Voltage (V) 102 7 5 3 2 10 7 5 3 2 35 0 0 10 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 40 101 7 5 3 2 10 Rated Surge On-State Current Nov.08.2004, page 3 of 6 Transient Thermal Impedance (°C/W) On-State Current (A) Maximum On-State Characteristics 102 2 3 5 7103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 –1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 Conduction Time (Cycles at 60Hz) BCR3PM-12L Allowable Case Temperature vs. RMS On-State Current 160 4.5 140 4.0 360° Conduction 3.5 Resistive, 3.0 inductive loads 2.5 2.0 1.5 1.0 of conduction angle 80 60 40 360° Conduction 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 inductive loads 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 160 140 140 120 × 120 × t2.3 100 × 100 × t2.3 60 × 60 × t2.3 120 100 80 60 All fins are black painted aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection Ambient Temperature (°C) Ambient Temperature (°C) 100 Curves apply regardless RMS On-State Current (A) 0 0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) 120 20 Resistive, 0.5 0 0 Rev.2.00, Case Temperature (°C) 5.0 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 105 7 5 3 2 Typical Example 104 7 5 3 2 3 10 7 5 3 2 2 10 –60 –40–20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Nov.08.2004, page 4 of 6 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 103 7 5 3.0 Typical Example 3 2 102 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 Junction Temperature (°C) 103 7 5 3 2 Distribution 102 7 5 3 2 T2+, G– Typical Example 1 10 7 5 3 T2+, G+ Typical Example 2 T2–, G– 0 10 –60 –40–20 0 20 40 60 80 100 120 140 Breakover Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40–20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage Commutation Characteristics 160 Typical Example Tj = 125°C 140 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Latching Current (mA) Latching Current vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) BCR3PM-12L 120 100 80 60 III Quadrant 40 20 I Quadrant 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 7 5 3 2 1 10 7 5 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) III Quadrant Minimum 100 7 0 10 I Quadrant 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Characteristics Test Circuits 3 10 7 5 3 2 6Ω Typical Example 6Ω IRGT III IRGT I IFGT I A 6V 102 7 5 6Ω A 6V 2 3 5 7 10 1 2 3 5 7 10 Nov.08.2004, page 5 of 6 2 V V 330Ω Test Procedure II Test Procedure I 3 2 101 0 10 A 6V 330Ω V Gate Current Pulse Width (µs) Rev.2.00, Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz 3 Characteristics Value 2 Rate of Rise of Off-State Voltage (V/µs) Gate Trigger Current vs. Gate Current Pulse Width Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 330Ω Test Procedure III BCR3PM-12L Package Dimensions TO-220F EIAJ Package Code JEDEC Code Conforms Mass (g) (reference value) Lead Material 2.0 Cu alloy 10.5 max 2.8 17 8.5 5.0 1.2 5.2 3.6 φ 3.2 ± 0.2 13.5 min 1.3 max 0.8 0.5 2.54 2.6 Symbol 4.5 2.54 Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 100 Type name +A Lead form Plastic Magazine (Tube) 50 Type name +A – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00, Nov.08.2004, page 6 of 6 Standard order code example BCR3PM-12LA BCR3PM-12LA-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. 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