BCR3KM-12 Triac Low Power Use REJ03G0312-0200 Rev.2.00 Nov.09.2004 Features • IT(RMS) : 3 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 15 mA (10 mA)Note3 • Insulated Type • Planar Passivation Type • UL Recognized : Yellow Card No. E223904 File No. E80271 Outline TO-220FN 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Electric rice cooker, electric pot, and controller for other heater Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.2.00, Nov.09.2004, page 1 of 6 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V BCR3KM-12 Symbol Ratings Unit RMS on-state current Parameter IT(RMS) 3.0 A Commercial frequency, sine full wave 360° conduction, Tc = 111°C Surge on-state current ITSM 30 A 60Hz sinewave 1 full cycle, peak value, non-repetitive I2 t 3.7 A2s PGM PG(AV) VGM IGM Tj Tstg — Viso 3 0.3 6 0.5 – 40 to +125 – 40 to +125 2.0 2000 W W V A °C °C g V Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.5 Unit mA V VFGT I VRGT I VRGT III IFGT I IRGT I IRGT III VGD Rth(j-c) Rth(j-a) — — — — — — 0.2 — — — — — — — — — — — 1.5 1.5 1.5 15Note3 15Note3 15Note3 — 4.0 50 V V V mA mA mA V °C/W °C/W I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Thermal resistance I II III I II III Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. High sensitivity (IGT ≤ 10 mA) is also available. (IGT item: 1) 4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. Rev.2.00, Nov.09.2004, page 2 of 6 Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 4.5 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2VDRM Junction to caseNote4 Junction to ambient BCR3KM-12 Performance Curves 102 7 5 3 2 Rated Surge On-State Current 40 Tj = 25°C Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 101 7 5 3 2 100 7 5 3 2 10 5 2 3 4 5 7 101 2 3 4 5 7 102 3 2 PGM = 3W 101 7 5 VGT PG(AV) = 0.3W IGM = 0.5A 100 IRGT I IFGT I, IRGT III VGD = 0.2V 10–1 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Trigger Current vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 101 Typical Example IRGT III IFGT I, IRGT I –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Nov.09.2004, page 3 of 6 Transient Thermal Impedance (°C/W) Gate Voltage (V) 15 Gate Characteristics (I, II and III) 3 2 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 20 Conduction Time (Cycles at 60Hz) 7 5 Rev.2.00, 25 On-State Voltage (V) 102 7 5 30 0 100 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 3 2 35 102 2 3 5 7 103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR3KM-12 102 On-State Power Dissipation (W) 5.0 7 5 4 3 2 101 7 5 4 3 2 100 2 10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 Ambient Temperature (°C) 4.5 4.0 360° Conduction 3.5 Resistive, 3.0 inductive loads 2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 140 140 120 100 Curves apply regardless of conduction angle 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Ambient Temperature (°C) 160 120 × 120 × t2.3 100 × 100 × t2.3 60 × 60 × t2.3 120 100 80 All fins are black painted aluminum and greased 60 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 140 120 100 80 60 40 20 0 0 Conduction Time (Cycles at 60Hz) 160 0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) Rev.2.00, Maximum On-State Power Dissipation Nov.09.2004, page 4 of 6 3.0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 105 7 5 Typical Example 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) BCR3KM-12 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 103 103 Typical Example 7 5 Latching Current (mA) 7 5 4 3 2 102 7 5 4 3 –60 –40 –20 7 5 3 2 101 7 5 100 0 20 40 60 80 100 120 140 T2+, G– Typical Example 102 3 2 101 Distribution 3 2 2 T2+, G+ Typical Example T2–, G– –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 160 Typical Example Tj = 125°C 140 120 100 III Quadrant 80 60 I Quadrant 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Characteristics Test Circuits 103 7 5 4 3 Typical Example IRGT III 6Ω 6Ω IRGT I IFGT I 2 A 6V 102 Test Procedure I 7 5 4 3 6Ω A 6V 2 3 4 5 7 101 2 3 4 5 7 102 Nov.09.2004, page 5 of 6 V V 330Ω Test Procedure II 2 101 0 10 A 6V 330Ω V Gate Current Pulse Width (µs) Rev.2.00, Latching Current vs. Junction Temperature Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature 330Ω Test Procedure III BCR3KM-12 Package Dimensions TO-220FN EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material 2.0 Cu alloy 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 Symbol Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Plastic Magazine (Tube) 50 Type name +RA Lead form Plastic Magazine (Tube) 50 Type name +RA – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00, Nov.09.2004, page 6 of 6 Standard order code example BCR3KM-12RA BCR3KM-12RA-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 © 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .2.0