BCR16PM-12L Triac Medium Power Use REJ03G0306-0200 Rev.2.00 Nov.09.2004 Features • • • • • Insulated Type • Planar Passivation Type • UL Recognized : Yellow Card No. E223904 File No. E80271 IT (RMS) : 16 A VDRM : 600 V IFGTI, IRGTI, IRGT : 30 mA (20 mA)Note5 Viso : 1500 V Outline TO-220F 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Contactless AC switch, light dimmer, electronic flasher unit, hair drier, control of household equipment such as TV sets, refrigerator, washing machine, electric fan, and other general controlling devices Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.2.00, Nov.09.2004, page 1 of 7 Symbol Voltage class 12 Unit VDRM VDSM 600 720 V V BCR16PM-12L Parameter RMS on-state current Symbol IT (RMS) Ratings 16 Unit A Surge on-state current ITSM 160 A I2 t 106.5 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5.0 0.5 10 2 – 40 to +125 – 40 to +125 2.0 1500 W W V A °C °C g V Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.5 Unit mA V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc = 71°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 25 A, Instantaneous measurement Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger currentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) — — — 0.2 — — — — — — 30Note5 30Note5 30Note5 — 3.0 mA mA mA V °C/W Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate non-trigger voltage Thermal resistance Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 10 — — V/µs Tj = 125°C Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT ≤ 20mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 8.0 A/ms 3. Peak off-state voltage VD = 400 V Rev.2.00, Nov.09.2004, page 2 of 7 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR16PM-12L Performance Curves 103 7 5 3 2 102 7 5 3 2 Rated Surge On-State Current 200 Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics Tj = 125°C Tj = 25°C 101 7 5 3 2 120 100 80 60 40 20 2 3 4 5 7 101 2 3 4 5 7 102 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V PG(AV) = 0.5W PGM = 5W 101 7 5 3 VGT = 1.5V 2 IGM = 2A 100 7 5 3 2 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Conduction Time (Cycles at 60Hz) 103 7 5 4 3 2 102 7 5 4 3 2 Typical Example IRGT III IFGT I, IRGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Nov.09.2004, page 3 of 7 Transient Thermal Impedance (°C/W) Gate Voltage (V) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 140 On-State Voltage (V) IFGT I, IRGT I, IRGT III VGD = 0.2V 10–1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rev.2.00, 160 0 100 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 3 2 180 102 2 3 5 7 103 2 3 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR16PM-12L 7 5 3 2 No Fins 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 Allowable Ambient Temperature vs. RMS On-State Current Curves apply regardless of conduction angle 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 16 18 20 160 Ambient Temperature (°C) Case Temperature (°C) 20 Allowable Case Temperature vs. RMS On-State Current All fins are black painted 140 aluminum and greased Natural convection 120 100 120 × 120 × t2.3 80 100 × 100 × t2.3 60 60 × 60 × t2.3 40 20 0 0 2 4 6 8 10 12 14 16 18 20 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Ambient Temperature (°C) 30 360° Conduction Resistive, 25 inductive loads RMS On-State Current (A) 140 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 35 Conduction Time (Cycles at 60Hz) 160 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) Rev.2.00, 40 On-State Power Dissipation (W) 103 Maximum On-State Power Dissipation Nov.09.2004, page 4 of 7 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) BCR16PM-12L 103 7 5 4 3 2 Latching Current (mA) Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 T2+, G– Typical Example 102 7 5 3 2 101 7 5 3 2 T2+, G+ Typical Example T2–, G– 100 –40 0 40 80 120 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage Typical Example 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Junction Temperature 140 160 Typical Example Tj = 125°C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Commutation Characteristics Gate Trigger Current vs. Gate Current Pulse Width 7 5 Typical Example Tj = 125°C 3 IT = 4A 2 τ = 500µs VD = 200V f = 3Hz 101 7 5 Minimum 100 7 0 10 Distribution Junction Temperature (°C) 160 3 2 103 7 5 3 2 Junction Temperature (°C) Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time I Quadrant Characteristics Value III Quadrant 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Rev.2.00, Latching Current vs. Junction Temperature Nov.09.2004, page 5 of 7 2 3 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature 103 7 5 4 3 2 Typical Example IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) BCR16PM-12L Gate Trigger Characteristics Test Circuits 6Ω 6Ω A 6V 330Ω V V Test Procedure I Test Procedure II 6Ω A 6V 330Ω V Test Procedure III Rev.2.00, A 6V Nov.09.2004, page 6 of 7 330Ω BCR16PM-12L Package Dimensions TO-220F EIAJ Package Code JEDEC Code Conforms Mass (g) (reference value) Lead Material 2.0 Cu alloy 10.5 max 2.8 17 8.5 5.0 1.2 5.2 3.6 φ 3.2 ± 0.2 13.5 min 1.3 max 0.8 0.5 2.54 2.6 Symbol 4.5 2.54 Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 100 Type name +A Lead form Plastic Magazine (Tube) 50 Type name +A – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00, Nov.09.2004, page 7 of 7 Standard order code example BCR16PM-12LA BCR16PM-12LA-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. 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