RENESAS BCR8PM-14LE

BCR8PM-14LE
Triac
Medium Power Use
REJ03G1260-0200
Rev.2.00
Jul 28, 2006
Features
•
•
•
•
• Insulated Type
• Planar Passivation Type
• UL Applying
IT (RMS) : 8 A
VDRM : 700 V
IFGTI, IRGTI, IRGTIII : 30 mA
Viso : 1500 V
Outline
RENESAS Package code: PRSS0003AA-B
(Package name: TO-220F(2) )
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2
3
Applications
Washing machine, inversion operation of capacitor motor, and other general controlling devices
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Rev.2.00
Jul 28, 2006
page 1 of 7
Symbol
VDRM
VDSM
Voltage class
14
700
800
Unit
V
V
BCR8PM-14LE
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
8
Unit
A
Surge on-state current
ITSM
80
A
I2 t
26
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
– 40 to +125
– 40 to +125
2.0
1500
W
W
V
A
°C
°C
g
V
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 82°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.6
Unit
mA
V
Test conditions
Tj = 125°C, VDRM applied
Tc = 25°C, ITM = 12 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate trigger currentNote2
Ι
ΙΙ
ΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
—
—
—
—
—
—
30
30
30
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
VGD
Rth (j-c)
0.2
—
—
—
—
4.3
V
°C/W
Gate non-trigger voltage
Thermal resistance
Tj = 125°C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
10
—
—
V/µs
Tj = 125°C
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 4.0 A/ms
3. Peak off-state voltage
VD = 400 V
Rev.2.00
Jul 28, 2006
page 2 of 7
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR8PM-14LE
Performance Curves
102
7
5
3
2
Rated Surge On-State Current
100
Tj = 125°C
101
7
5
3
2
Tj = 25°C
100
7
5
3
2
Surge On-State Current (A)
On-State Current (A)
Maximum On-State Characteristics
50
40
30
20
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Trigger Current vs.
Junction Temperature
PG(AV) = 0.5 W
PGM = 5 W
IGM = 2 A
VGT = 1.5 V
100
7
5
3
2
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
103
7
5
4
3
2
Typical Example
IRGT III
102
7 IRGT I, IFGT I
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Jul 28, 2006
page 3 of 7
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
60
Conduction Time (Cycles at 60Hz)
IFGT I IRGT I, IRGT III
VGD = 0.2 V
10–1
7
5
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
70
On-State Voltage (V)
3
2 VGM = 10 V
Rev.2.00
80
0
100
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
101
7
5
3
2
90
102 2 3 5 7103 2 3 5 7
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0 –1
10 2 3 5 7100 2 3 5 7101 2 3 5 7102
Conduction Time (Cycles at 60 Hz)
BCR8PM-14LE
Maximum On-State Power Dissipation
16
103
7
5
3
2
No Fins
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
On-State Power Dissipation (W)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
4
2
0
2
4
6
8
10
12
14
16
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
Ambient Temperature (°C)
Curves apply regardless
140 of conduction angle
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
2
6
4
8
0
10
12
14
All fins are black painted
140 aluminum and greased
120
120 × 120 × t2.3
100 × 100 × t2.3
100
60 × 60 × t2.3
80
60
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
40
20
0
16
0
2
4
6
8
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
Jul 28, 2006
page 4 of 7
3.0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Case Temperature (°C)
6
RMS On-State Current (A)
160
Ambient Temperature (°C)
8
Conduction Time (Cycles at 60Hz)
160
Rev.2.00
12 360° Conduction
Resistive,
10 inductive loads
0
10–1
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
0
14
105
7 Typical Example
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
BCR8PM-14LE
103
7
5
4
3
2
Latching Current (mA)
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
103
7
5
3
2
Distribution
T2+, G–
Typical Example
102
7
5
3
2
101
7
5
3 T +, G+
2 2– – Typical Example
T2 , G
100
–40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Junction Temperature (°C)
160
Typical Example
Tj = 125°C
140
120
100
80
60
III Quadrant
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics
Gate Trigger Current vs.
Gate Current Pulse Width
3 Typical Example
2 Tj = 125°C
102 IT = 4 A
7 τ = 500 µs
5 VD = 200 V
3 f = 3 Hz
2
101
7
5
Minimum
3 Characteristics
2 Value
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
I Quadrant
III Quadrant
100
7
5
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Rate of Decay of On-State
Commutating Current (A/ms)
Rev.2.00
Latching Current vs.
Junction Temperature
Jul 28, 2006
page 5 of 7
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
103
7
5
4
3
2
Typical Example
IFGT I
IRGT I
IRGT III
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (µs)
BCR8PM-14LE
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
A
6V
330 Ω
V
Test Procedure I
A
330 Ω
V
Test Procedure III
Rev.2.00
Jul 28, 2006
V
Test Procedure II
6Ω
6V
A
6V
page 6 of 7
330 Ω
BCR8PM-14LE
Package Dimensions
JEITA Package Code
SC-67
Package Name
TO-220F(2)
RENESAS Code
PRSS0003AA-B
Previous Code

MASS[Typ.]
2.0g
Unit: mm
10.5Max
2.8
17
8.5
5.0
1.2
5.2
φ3.2 ± 0.2
13.5Min
3.6
1.3Max
0.8
2.54
0.5
2.6
4.5
2.54
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Vinyl sack
100 Type name
Lead form
Plastic Magazine (Tube)
50 Type name – Lead forming code
Note : Please confirm the specification about the shipping in detail.
Rev.2.00
Jul 28, 2006
page 7 of 7
Standard order
code example
BCR8PM-14LE
BCR8PM-14LE-A8
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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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