polyfet rf devices SE701 General Description Silicon VDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others. "Polyfet" process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 45.0 Watts Push - Pull Package Style AE HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 110 Watts Maximum Junction Temperature o 1.40 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL PARAMETER MIN Gps Common Source Power Gain Drain Efficiency VSWR TYP 6.5 A Drain to Source Voltage Gate to Source Voltage + 20 V - 0V 70 V 70 V 45.0 WATTS OUTPUT ) MAX 10 50 Load Mismatch Tolerance Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz % Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz Relative Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 1.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 10V Vgs Gate Bias for Drain Current 5 V Ids = 0.10 A, Vgs = Vds gM Forward Transconductance 65 2 Ids = 20.00 mA, Vgs = 0V 1.2 Mho Vds = 10V, Vgs = 5V 2.50 A Rdson Saturation Resistance 0.85 Ohm Vgs = 20 V, Ids = Idsat Saturation Current 7.00 Amp Vgs = 20 V, Vds = 10V Ciss Common Source Input Capacitance 50.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 3.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 32.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/10/2015 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com SE701 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE S1A 1 DIE CAPACITANCE CAPACITANCE IN PFS 1000 Coss 100 Ciss 10 Crss 1 0 4 8 12 16 20 24 28 VDS IN VOLTS IV CURVE ID & GM VS VGS S1A 1 DIE IV S1A 1 DIE ID & GM Vs VG 10.00 Id in amps; Gm in mhos 8 7 ID IN AMPS 6 5 4 3 2 Id 1.00 gM 1 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 14 VDS IN VOLTS vg=8v Vg=6v 16 0 18 20 0 2 vg=12v 4 6 8 10 Vgs in Volts 12 14 16 18 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 03/10/2015 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com