Ordering number : ENA0412A 2SC6097 Bipolar Transistor http://onsemi.com 60V, 3A, Low VCE(sat), NPN Single TP/TP-FA Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features • • • Adoption of FBET, MBIT process Low collector-to-emitter saturation voltage High allowable power dissipation Large current capacity High-speed switching • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCES Collector-to-Emitter Voltage Collector-to-Emitter Voltage VCEO VEBO IC Emitter-to-Base Voltage Collector Current Collector Current (Pulse) ICP IB Base Current Unit 100 V 100 V 60 V 6.5 V 3 A 5 600 A mA Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-003 7003-003 0.5 0.6 1 2 2.3 7.5 0.5 3 2.3 0.6 1 : Base 2 : Collector 3 : Emitter 4 : Collector 1 2 2.5 0.8 0.8 1.6 0.85 1.2 1.2 5.5 0.85 0.7 3 0 to 0.2 1.2 2.3 2SC6097-TL-E 0.5 1.5 1.5 4 7.0 5.5 4 2.3 6.5 5.0 2SC6097-E 0.5 7.0 2.3 6.5 5.0 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector TP-FA TP Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251 • Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252 • Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL Electrical Connection 2,4 C6097 1 LOT No. TL 3 Semiconductor Components Industries, LLC, 2013 September, 2013 80812 TKIM/70306/53006EA MSIM TB-00002348 No. A0412-1/9 2SC6097 Continued from preceding page. Parameter Symbol Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Conditions Ratings Tc=25°C Unit 0.8 W 15 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage VCE=2V, IC=100mA VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO Emitter-to-Base Breakdown Voltage Turn-On Time ton Storage Time tstg tf Fall Time typ Unit max 300 VCE=10V, IC=500mA V(BR)CES V(BR)CEO V(BR)EBO Collector-to-Emitter Breakdown Voltage Ratings min VCB=50V, IE=0A VEB=4V, IC=0A fT Cob Output Capacitance Conditions 1 μA 1 μA 600 390 VCB=10V, f=1MHz IC=1A, IB=50mA MHz 18 IC=1A, IB=100mA IC=1A, IB=100mA IC=10μA, IE=0A pF 100 150 mV 90 135 mV 0.84 1.2 V 100 V IC=100μA, RBE=0Ω IC=1mA, RBE=∞ 100 V 60 V IE=10μA, IC=0A 6.5 V 35 See specified Test Circuit ns 680 ns 24 ns Switching Time Test Circuit IB1 PW=20μs D.C. 1% INPUT OUTPUT IB2 VR10 RB RL 50Ω + 100μF VBE= --5V + 470μF VCC=30V IC=10IB1= --10IB2=0.5A Ordering Information Device 2SC6097-E 2SC6097-TL-E Package Shipping memo TP 500pcs./bag Pb Free TP-FA 700pcs./reel Pb Free No. A0412-2/9 2SC6097 IC -- VCE 5.0 IC -- VBE 3.0 VCE=2V 40mA 2.5 20mA 2.0 10mA 1.5 5mA 1.0 2mA 2.0 1.5 1.0 --25°C 3.0 2.5 Ta=7 5°C 25°C 3.5 100mA 80mA 60mA 4.0 Collector Current, IC -- A Collector Current, IC -- A 4.5 0.5 0.5 IB=0mA 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Collector-to-Emitter Voltage, VCE -- V 0 0 1.0 DC Current Gain, hFE Gain-Bandwidth Product, f T -- MHz Ta=75°C 25°C 5 --25°C 3 2 100 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A 3 0.8 1.0 f T -- IC VCE=10V 3 2 100 7 5 3 2 3 5 7 0.1 2 3 5 7 1.0 IC / IB=10 f=1MHz 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 2 10 3 IT11049 VCE(sat) -- IC 5 3 2 Collector Current, IC -- A IT11048 5 1.2 IT11047 5 2 0.01 5 Cob -- VCB 7 0.6 7 VCE=2V 7 0.4 Base-to-Emitter Voltage, VBE -- V hFE -- IC 1000 0.2 IT11046 2 0.1 7 5 °C 75 3 2 = Ta 0.01 2 C 5° --2 C ° 5 7 5 7 3 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 2 0.01 5 7 100 IT11050 Collector-to-Base Voltage, VCB -- V 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A VCE(sat) -- IC 5 2 3 5 IT11051 VBE(sat) -- IC 3 IC / IB=20 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 0.1 7 5 °C 75 = Ta 3 C 5° --2 2 °C 25 0.01 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT11052 2 1.0 Ta= --25°C 7 25°C 75°C 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT11053 No. A0412-3/9 2SC6097 ASO <10μs ICP=5A 10 ms 10 1.0 7 5 DC s Collector Current, IC -- A IC=3A 50 0μ 0m s op era 3 2 tio n 0.1 7 5 3 2 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT11054 μs 100ms 3 2 0.1 7 5 Tc=25°C Single Pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT11055 PC -- Tc 17.5 0.8 15.0 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 1.0 7 5 <10μs 50 0 DC operation IC=3A 0.01 0.1 PC -- Ta 0.9 3 2 3 2 Ta=25°C Single Pulse 10ms 1ms ICP=5A μs 100 3 2 1m s ASO 10 7 5 μs 100 Collector Current, IC -- A 10 7 5 0.7 0.6 0.5 0.4 0.3 0.2 12.5 10.0 7.5 5.0 2.5 0.1 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11056 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11057 No. A0412-4/9 2SC6097 Taping Specification 2SC6097-TL-E No. A0412-5/9 2SC6097 Outline Drawing 2SC6097-TL-E Land Pattern Example Mass (g) Unit 0.282 mm Unit: mm * For reference 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No. A0412-6/9 2SC6097 Bag Packing Specification 2SC6097-E No. A0412-7/9 2SC6097 Outline Drawing 2SC6097-E Mass (g) Unit 0.315 mm * For reference No. A0412-8/9 2SC6097 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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