2SC6097 Bipolar Transistor 60V, 3A, Low VCE

Ordering number : ENA0412A
2SC6097
Bipolar Transistor
http://onsemi.com
60V, 3A, Low VCE(sat), NPN Single TP/TP-FA
Applications
•
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter
Features
•
•
•
Adoption of FBET, MBIT process
Low collector-to-emitter saturation voltage
High allowable power dissipation
Large current capacity
High-speed switching
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCES
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
VCEO
VEBO
IC
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
ICP
IB
Base Current
Unit
100
V
100
V
60
V
6.5
V
3
A
5
600
A
mA
Continued on next page.
Package Dimensions unit : mm (typ)
Package Dimensions unit : mm (typ)
7518-003
7003-003
0.5
0.6
1
2
2.3
7.5
0.5
3
2.3
0.6
1 : Base
2 : Collector
3 : Emitter
4 : Collector
1
2
2.5
0.8
0.8
1.6
0.85
1.2
1.2
5.5
0.85
0.7
3
0 to 0.2
1.2
2.3
2SC6097-TL-E
0.5
1.5
1.5
4
7.0
5.5
4
2.3
6.5
5.0
2SC6097-E
0.5
7.0
2.3
6.5
5.0
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP-FA
TP
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Packing Type (TP-FA) : TL
Electrical Connection
2,4
C6097
1
LOT No.
TL
3
Semiconductor Components Industries, LLC, 2013
September, 2013
80812 TKIM/70306/53006EA MSIM TB-00002348 No. A0412-1/9
2SC6097
Continued from preceding page.
Parameter
Symbol
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Conditions
Ratings
Tc=25°C
Unit
0.8
W
15
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
VCE=2V, IC=100mA
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
Emitter-to-Base Breakdown Voltage
Turn-On Time
ton
Storage Time
tstg
tf
Fall Time
typ
Unit
max
300
VCE=10V, IC=500mA
V(BR)CES
V(BR)CEO
V(BR)EBO
Collector-to-Emitter Breakdown Voltage
Ratings
min
VCB=50V, IE=0A
VEB=4V, IC=0A
fT
Cob
Output Capacitance
Conditions
1
μA
1
μA
600
390
VCB=10V, f=1MHz
IC=1A, IB=50mA
MHz
18
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=10μA, IE=0A
pF
100
150
mV
90
135
mV
0.84
1.2
V
100
V
IC=100μA, RBE=0Ω
IC=1mA, RBE=∞
100
V
60
V
IE=10μA, IC=0A
6.5
V
35
See specified Test Circuit
ns
680
ns
24
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C. 1%
INPUT
OUTPUT
IB2
VR10
RB
RL
50Ω
+
100μF
VBE= --5V
+
470μF
VCC=30V
IC=10IB1= --10IB2=0.5A
Ordering Information
Device
2SC6097-E
2SC6097-TL-E
Package
Shipping
memo
TP
500pcs./bag
Pb Free
TP-FA
700pcs./reel
Pb Free
No. A0412-2/9
2SC6097
IC -- VCE
5.0
IC -- VBE
3.0
VCE=2V
40mA
2.5
20mA
2.0
10mA
1.5
5mA
1.0
2mA
2.0
1.5
1.0
--25°C
3.0
2.5
Ta=7
5°C
25°C
3.5
100mA
80mA
60mA
4.0
Collector Current, IC -- A
Collector Current, IC -- A
4.5
0.5
0.5
IB=0mA
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Collector-to-Emitter Voltage, VCE -- V
0
0
1.0
DC Current Gain, hFE
Gain-Bandwidth Product, f T -- MHz
Ta=75°C
25°C
5
--25°C
3
2
100
7
5
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
Collector Current, IC -- A
3
0.8
1.0
f T -- IC
VCE=10V
3
2
100
7
5
3
2
3
5
7 0.1
2
3
5
7 1.0
IC / IB=10
f=1MHz
3
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Output Capacitance, Cob -- pF
2
10
3
IT11049
VCE(sat) -- IC
5
3
2
Collector Current, IC -- A
IT11048
5
1.2
IT11047
5
2
0.01
5
Cob -- VCB
7
0.6
7
VCE=2V
7
0.4
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
1000
0.2
IT11046
2
0.1
7
5
°C
75
3
2
=
Ta
0.01
2
C
5°
--2
C
°
5
7
5
7
3
5
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
2
0.01
5 7 100
IT11050
Collector-to-Base Voltage, VCB -- V
3
5
7 0.1
2
3
5
7 1.0
2
Collector Current, IC -- A
VCE(sat) -- IC
5
2
3
5
IT11051
VBE(sat) -- IC
3
IC / IB=20
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
2
0.1
7
5
°C
75
=
Ta
3
C
5°
--2
2
°C
25
0.01
7
5
0.01
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
2
3
5
IT11052
2
1.0
Ta= --25°C
7
25°C
75°C
5
3
0.01
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
2
3
5
IT11053
No. A0412-3/9
2SC6097
ASO
<10μs
ICP=5A
10
ms
10
1.0
7
5
DC
s
Collector Current, IC -- A
IC=3A
50
0μ
0m
s
op
era
3
2
tio
n
0.1
7
5
3
2
0.01
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Emitter Voltage, VCE -- V
5 7 100
IT11054
μs
100ms
3
2
0.1
7
5
Tc=25°C
Single Pulse
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Emitter Voltage, VCE -- V
5 7 100
IT11055
PC -- Tc
17.5
0.8
15.0
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
1.0
7
5
<10μs
50
0
DC operation
IC=3A
0.01
0.1
PC -- Ta
0.9
3
2
3
2
Ta=25°C
Single Pulse
10ms 1ms
ICP=5A
μs
100
3
2
1m
s
ASO
10
7
5
μs
100
Collector Current, IC -- A
10
7
5
0.7
0.6
0.5
0.4
0.3
0.2
12.5
10.0
7.5
5.0
2.5
0.1
0
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT11056
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT11057
No. A0412-4/9
2SC6097
Taping Specification
2SC6097-TL-E
No. A0412-5/9
2SC6097
Outline Drawing
2SC6097-TL-E
Land Pattern Example
Mass (g) Unit
0.282 mm
Unit: mm
* For reference
7.0
7.0
2.5
2.0
1.5
2.3
2.3
No. A0412-6/9
2SC6097
Bag Packing Specification
2SC6097-E
No. A0412-7/9
2SC6097
Outline Drawing
2SC6097-E
Mass (g) Unit
0.315 mm
* For reference
No. A0412-8/9
2SC6097
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PS No. A0412-9/9