Ordering number : EN8275A 2SA2169/2SC6017 Bipolar Transistor http://onsemi.com (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Relay drivers, lamp drivers, motor drivers Features • • Adoption of MBIT processes Low collector-to-emitter saturation voltage • • Large current capacity High-speed switching Specifications ( ): 2SA2169 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO (--50)100 V (--)50 V (--)6 V Collector Current VEBO IC (--)10 A Collector Current (Pulse) ICP (--)13 A Collector-to-Emitter Voltage Emitter-to-Base Voltage PW≤100μs Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-003 7003-003 0.5 0.6 1 2 2.3 7.5 0.6 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector 3 2.3 1 2 2.5 0.8 0.8 1.6 0.85 1.2 3 0 to 0.2 1.2 2.3 2SA2169-TL-E 2SC6017-TL-E 1.2 5.5 0.85 0.7 0.5 1.5 1.5 4 7.0 5.5 4 2.3 6.5 5.0 2SA2169-E 2SC6017-E 0.5 7.0 2.3 6.5 5.0 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector TP-FA TP Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251 • Minimum Packing Quantity : 500 pcs./bag • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252 • Minimum Packing Quantity : 700 pcs./reel Marking (TP, TP-FA) Packing Type (TP-FA) : TL Electrical Connection 2,4 A2169 LOT No. 2,4 C6017 LOT No. TL 1 2SA2169 Semiconductor Components Industries, LLC, 2013 September, 2013 1 3 2SC6017 3 82212 TKIM/32505EA TSIM TB-00001269 No.8275-1/10 2SA2169 / 2SC6017 Continued from preceding page. Parameter Symbol Base Current Conditions Ratings IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C Unit (--)2 A 0.95 W 20 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage VCE=(--)2V, IC=(--)1A Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time max (--)10 μA μA (560)700 MHz (90)60 IC=(--)5A, IB=(--)250mA IC=(--)100μA, IE=0A Unit (--)10 (130)200 VCB=(--)10V, f=1MHz IC=(--)5A, IB=(--)250mA V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage typ 200 VCE=(--)5V, IC=(--)1A VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings min VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A fT Cob Output Capacitance Conditions pF (--290)180 (--580)360 (--)0.93 (--)1.4 mV V (--50)100 V V IC=(--)1mA, RBE=∞ (--)50 V(BR)EBO ton IE=(--)100μA, IC=0A (--)6 tstg tf See specified Test Circuit. V (70)40 ns (650)1000 ns (60)80 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% OUTPUT IB2 INPUT VR RB 50Ω RL + 100μF + 470μF IC=20IB1= --20IB2=3A VBE= --5V VCC=20V For PNP, the polarity is reversed. Ordering Information Device 2SA2169-E 2SC6017-E Package Shipping TP 500pcs./bag TP 500pcs./bag 2SA2169-TL-E TP-FA 700pcs./reel 2SC6017-TL-E TP-FA 700pcs./reel memo Pb Free No.8275-2/10 2SA2169 / 2SC6017 IC -- VCE 2SC6017 --4.0 --3.5 --3.0 4.5 --12mA --10mA --8mA --6mA --2.5 --4mA --2.0 --1.5 --2mA --1.0 A 18m A 20m 4.0 3.5 3.0 6mA 2.5 2.0 4mA 1.5 2mA 0.5 IB=0 0 --0.5 --1.0 --1.5 Collector-to-Emitter Voltage, VCE -- V 0 1.0 1.5 2.0 Collector-to-Emitter Voltage, VCE -- V IT08962 IC -- VBE 1.0 2SC6017 VCE=2V 2SA2169 VCE= --2V --0.6 --0.2 25°C --25°C --0.4 0.8 0.6 0.4 Ta=75°C Collector Current, IC -- A --0.8 Ta=75°C Collector Current, IC -- A 0.5 IT08961 IC -- VBE --1.0 IB=0 0 --2.0 0.2 0 --25°C 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Base-to-Emitter Voltage, VBE -- V --1.0 0 DC Current Gain, hFE 25°C --25°C 2 2 3 5 7 --1.0 2 3 3 --25°C Output Capacitance, Cob -- pF 2 100 7 5 3 --0.1 2 3 5 7 0.1 1.0 IT08964 2SC6017 VCE=2V 2 3 5 7 1.0 2 3 5 7 10 IT08966 Cob -- VCB 3 2SA2169 f=1MHz 3 0.9 Collector Current, IC -- A Cob -- VCB 5 0.8 2 5 0.01 5 7 --10 IT08965 Collector Current, IC -- A 0.7 hFE -- IC 25°C 7 5 7 --0.1 0.6 Ta=75°C 7 3 0.5 5 100 2 0.4 7 100 5 --0.01 0.3 Base-to-Emitter Voltage, VBE -- V 2SA2169 VCE= --2V Ta=75°C 3 0.2 1000 7 5 0.1 IT08963 hFE -- IC 1000 DC Current Gain, hFE 12mA 10mA 8mA 1.0 --0.5 Output Capacitance, Cob -- pF 14mA A 16m 25°C Collector Current, IC -- A --4.5 IC -- VCE 5.0 14mA mA -6 1 -mA -- 18 A 0m --2 2SA2169 Collector Current, IC -- A --5.0 2SC6017 f=1MHz 2 100 7 5 3 2 3 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V 3 5 7 IT08967 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 3 5 7 IT08968 No.8275-3/10 2SA2169 / 2SC6017 f T -- IC 100 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 2 --0.1 3 2 °C 25 --0.01 7 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SA2169 IC / IB=50 2 --1.0 7 5 3 °C 25 --0.1 7 5 C 75° Ta= 3 3 2 2 3 °C --25 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT08970 VCE(sat) -- IC 2SC6017 IC / IB=20 7 5 3 2 0.1 7 5 25 3 °C 5°C =7 Ta 5°C --2 2 0.01 7 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT08972 2 3 5 7 10 IT08974 Collector Current, IC -- A VCE(sat) -- IC 7 3 2 5 3 0.01 5 7 --10 IT08971 VCE(sat) -- IC 7 5 7 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 5°C =7 Ta 5°C --2 100 1.0 2SA2169 IC / IB=20 7 5 2SC6017 VCE=5V 2 10 0.01 5 7 --10 IT08969 VCE(sat) -- IC --1.0 7 5 Gain-Bandwidth Product, f T -- MHz 2 10 --0.01 f T -- IC 3 2SA2169 VCE= --5V 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Gain-Bandwidth Product, f T -- MHz 3 2SC6017 IC / IB=50 3 2 0.1 ° 25 7 5 C C 5° =7 Ta 5°C --2 3 2 2 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 25°C 75°C 5 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT08975 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 Ta= --25°C 3 5 7 0.1 2 3 5 7 1.0 VBE(sat) -- IC 3 2SA2169 IC / IB=50 --1.0 2 Collector Current, IC -- A VBE(sat) -- IC 3 7 0.01 0.01 5 7 --10 IT08973 2SC6017 IC / IB=50 2 1.0 Ta= --25°C 25°C 7 75°C 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT08976 No.8275-4/10 2SA2169 / 2SC6017 ASO ICP=13A (PW≤100μs) 10μs 10 0m s IC=10A 0.1 7 5 2SA2169 / 2SC6017 Tc=25°C Single Pulse For PNP minus sign is omitted. 3 2 0.01 0.1 2 3 5 7 1.0 2 3 0.4 0.2 0 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 IT09360 PC -- Tc 25 0.6 k sin at he 3 2 0.8 o 1.0 7 5 2SA2169 / 2SC6017 N s 0μ 50 s 1m n ms tio 10 era op 3 2 Collector Dissipation, PC -- W s 0μ 10 10 7 5 PC -- Ta 1.0 0.95 DC Collector Current, IC -- A 3 2 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09361 Collector Dissipation, PC -- W 2SA2169 / 2SC6017 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT09362 No.8275-5/10 2SA2169 / 2SC6017 Taping Specification 2SA2169-TL-E, 2SC6017-TL-E No.8275-6/10 2SA2169 / 2SC6017 Outline Drawing 2SA2169-TL-E, 2SC6017-TL-E Land Pattern Example Mass (g) Unit 0.282 mm * For reference Unit: mm 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No.8275-7/10 2SA2169 / 2SC6017 Bag Packing Specification 2SA2169-E, 2SC6017-E No.8275-8/10 2SA2169 / 2SC6017 Outline Drawing 2SA2169-E, 2SC6017-E Mass (g) Unit 0.315 mm * For reference No.8275-9/10 2SA2169 / 2SC6017 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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