Ordering number : EN8035A 2SC5994 Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single PCP http://onsemi.com Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment • Features Adoption of MBIT process Low collector-to-emitter saturation voltage • • • • Large current capacity High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Conditions Ratings 100 V 100 V VCEO 50 V VEBO IC 6 V 2 A ICP IB Base Current Unit VCBO VCES 4 400 A mA Continued on next page. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel 2SC5994-TD-E 4.5 1.6 1 2 Marking FJ Packing Type: TD 4.0 1.0 2.5 1.5 LOT No. Top View TD 3 0.4 0.4 0.5 1.5 3.0 Electrical Connection 2 0.75 1 1 : Base 2 : Collector 3 : Emitter Bottom View 3 PCP Semiconductor Components Industries, LLC, 2013 September, 2013 90512 TKIM/21505EA TSIM TB-00001137 No.8035-1/7 2SC5994 Continued from preceding page. Parameter Symbol Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Conditions Ratings Unit When mounted on ceramic substrate (450mm2×0.8mm) 1.3 Tc=25°C 3.5 W 150 °C --55 to +150 °C W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time ICBO IEBO hFE1 VCE=2V, IC=100mA hFE2 VCE=2V, IC=1.5A fT Cob VCE=10V, IC=300mA Ratings min typ VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton Unit max VCB=50V, IE=0A VEB=4V, IC=0A tstg tf Fall Time Conditions 200 1 μA 1 μA 560 40 420 VCB=10V, f=1MHz IC=1A, IB=50mA MHz 9 pF 135 300 mV 0.9 1.2 V IC=1A, IB=50mA IC=10μA, IE=0A 100 V IC=100μA, RBE=0Ω 100 V 50 V IC=1mA, RBE=∞ IE=10μA, IC=0A 6 V 30 See specified Test Circuit. ns 330 ns 40 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% OUTPUT IB2 INPUT VR RB RL 50Ω + 100μF VBE= --5V + 470μF VCC=25V IC=10IB1= --10IB2=700mA Ordering Information Device 2SC5994-TD-E Package Shipping memo PCP 1,000pcs./reel Pb Free No.8035-2/7 2SC5994 IC -- VCE VCE=2V 1.8 Collector Current, IC -- A 50mA 10mA 1.2 5mA 1.0 3mA 0.8 2mA 0.6 1mA 0.4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.2 IB=0mA 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Collector-to-Emitter Voltage, VCE -- V 0 0 2.0 Gain-Bandwidth Product, f T -- MHz Ta=75°C --25°C 2 100 7 2 3 5 7 2 0.1 3 5 7 2 1.0 Collector Current, IC -- A 7 7 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 5 7 5 3 5 7 0.1 2 3 5 3 5° --2 C C 25° 2 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 2 3 IT07590 VCE(sat) -- IC 3 2 0.1 7 5 = Ta 3 °C 75 C 5° --2 2 25 2 3 5 7 0.1 °C 2 3 5 7 1.0 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V = Ta 5 1.0 2 3 IT07592 VBE(sat) -- IC IC / IB=20 0.1 °C 75 7 IC / IB=20 3 2 0.01 0.01 2 IT07591 3 7 1.1 IT07588 100 IC / IB=50 5 1.0 2 0.01 0.01 7 VCE(sat) -- IC 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 0.9 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 10 5 0.8 3 5 2 3 0.7 5 IT07589 3 2 0.6 7 f=1MHz 5 0.1 0.5 f T -- IC 3 0.01 3 Cob -- VCB 5 0.4 VCE=10V 25°C 5 0.01 0.3 Base-to-Emitter Voltage, VBE -- V VCE=2V 3 0.2 1000 7 5 0.1 IT07587 hFE -- IC 1000 DC Current Gain, hFE 1.6 --25°C 15mA 1.6 1.4 IC -- VBE 2.0 20mA 5°C 25°C A 30m 1.8 Collector Current, IC -- A 25mA Ta= 7 2.0 3 IT07593 2 1.0 Ta= --25°C 7 75°C 25°C 5 3 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 IT07594 No.8035-3/7 2SC5994 ASO ICP=4A 10 10 1m ms 0m s DC s 0μ 1.0 7 5 op era 3 tio n 2 0.1 7 5 3 2 0.01 0.1 3 ou nt 1.0 ed on ac er 0.8 am ic bo ar 0.6 d (4 50 m 0.4 m2 ✕ 0. 0.2 Tc=25°C Single Pulse 2 M 1.2 s 50 Collector Current, IC -- A IC=2A 2 1.3 <10μs μs 100 3 PC -- Ta 1.4 Collector Dissipation, PC -- W 10 7 5 8m m ) 0 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT07595 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07596 PC -- Tc 4.0 Collector Dissipation, PC -- W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT07597 No.8035-4/7 2SC5994 Embossed Taping Specification 2SC5994-TD-E No.8035-5/7 2SC5994 Outline Drawing 2SC5994-TD-E Land Pattern Example Mass (g) Unit 0.058 mm * For reference Unit: mm 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 No.8035-6/7 2SC5994 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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