Ordering number : ENA0583A 2SA2202 Bipolar Transistor –100V, –2A, Low VCE(sat) PNP Single PCP http://onsemi.com Applicaitons DC / DC converters, relay drivers, lamp drivers, motor drivers, flash • Features Adoption of FBET, MBIT processes Low collector to emitter saturation voltage High allowable power dissipation • • • • • Large current capacity High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Conditions Ratings Unit VCBO VCES --100 V --100 V VCEO --100 V --7 V Collector Current VEBO IC --2 A Collector Current (Pulse) ICP --3 A Collector to Emitter Voltage Emitter to Base Voltage Continued on next page. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Top View 2SA2202-TD-E Packing Type: TD 4.5 1.6 LOT No. RC 2.5 2 4.0 1.0 1 Marking 1.5 TD 3 0.4 0.4 0.5 1.5 3.0 Electrical Connection 2 0.75 1 3 1 : Base 2 : Collector 3 : Emitter Bottom View PCP Semiconductor Components Industries, LLC, 2014 January, 2014 13114 TKIM TC-00003092/D2706EA TIIM TC-00000421 No.A0583-1/4 2SA2202 Continued from preceding page. Parameter Symbol Base Current Conditions Ratings IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Unit --400 mA When mounted on ceramic substrate (250mm2×0.8mm) 1.3 W Tc=25°C 3.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Turn-ON Time Storage Time Fall Time min typ max VCB=--80V, IE=0A VEB=--4V, IC=0A VCE=--5V, IC=--100mA VCE=--10V, IC=--500mA fT Cob Output Capacitance Ratings Conditions 200 VCE(sat) VBE(sat) --1 μA --1 μA 400 300 VCB=--10V, f=1MHz IC=--1A, IB=--100mA Unit MHz 23 pF --120 --240 mV --0.85 --1.2 V IC=--1A, IB=--100mA IC=--10μA, IE=0A --100 V IC=--100μA, RBE=0Ω --100 V V(BR)CEO IC=--1mA, RBE=∞ --100 V V(BR)EBO ton IE=--10μA, IC=0A tstg tf See specified Test Circuit. V(BR)CBO V(BR)CES --7 V 40 ns 600 ns 30 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% IB2 OUTPUT INPUT VR RB RL=100Ω + 50Ω + 220μF 470μF VBE=5V VCC= --50V IC=10IB1= --10IB2= --0.5A Ordering Information Package Shipping memo PCP 1,000pcs./reel Pb Free --40mA --18 --1.2 mA --0.8 --20mA IB= --5mA --0.4 --1.6 --1.4 --1.2 --1.0 --0.8 Ta=75 °C 0m A --1 60 mA --1 4 --100mA --80mA --60mA Collector Current, IC -- A 0m A --1.8 --20 0 Collector Current, IC -- A --1.6 VCE= --5V A 0m 2 --1 IC -- VBE --2.0 --0.6 --25°C IC -- VCE --2.0 25°C Device 2SA2202-TD-E --0.4 --0.2 0 0 0 --0.1 --0.2 --0.3 --0.4 Collector to Emitter Voltage, VCE -- V --0.5 IT11879 0 --0.2 --0.4 --0.6 --0.8 Base to Emitter Voltage, VBE -- V --1.0 IT11880 No.A0583-2/4 2SA2202 hFE -- IC 1000 DC Current Gain, hFE 5 Ta=75°C 25°C --25°C 3 2 100 7 5 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 3 2 --0.1 25 7 5 °C 5°C 5 7 Ta= 3 °C --25 2 --0.01 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Cob -- VCB 2 Output Capacitance, Cob -- pF Base to Emitter Saturation Voltage, VBE(sat) -- V f=1MHz 2 Ta= --25°C 7 75°C 25°C 5 5 IT11882 IC / IB=10 --1.0 3 Collector Current, IC -- A IT11881 VBE(sat) -- IC 3 IC / IB=10 7 Collector to Emitter Saturation Voltage, VCE(sat) -- V 7 VCE(sat) -- IC --1.0 VCE= --5V 100 7 5 3 2 10 3 7 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 Collector Current, IC -- A 7 --1.0 2 Collector Current, IC -- A 3 5 Tc=25°C Single pulse When mounted on ceramic substrate (250mm2✕0.8mm) 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 Collector to Emitter Voltage, VCE -- V IT11885 5 7--100 2 IT11886 PC -- Tc 4.0 3.5 1.4 W 1.3 Collector Dissipation, PC -- W Collector Dissipation, PC -- W --0.1 7 5 --0.01 --0.01 2 3 PC -- Ta 1.6 μs C) 5° =2 C) 5° =2 Ta n( 5 Tc 3 n( tio 2 2 2 <10μs tio era op 3 3 3 7 --0.1 5 7 --100 IT11884 era 5 3 100 s 0μ IC= --2A --1.0 7 5 op 7 2 10ms 1ms 100ms DC 100 5 7 --10 DC 2 3 50 3 2 3 5 2 SOA ICP= --3A 5 3 5 7 --1.0 5 7 2 3 Collector to Base Voltage, VCB -- V VCE= --10V 2 --0.01 2 IT11883 fT -- IC 1000 Gain-Bandwidth Product, fT -- MHz 5 --0.1 5 he nm 1.2 ou nt 1.0 ed on ce ra 0.8 m ic su bs 0.6 tra te (2 50 m 0.4 m2 ✕0 .8 m 0.2 3.0 2.5 2.0 1.5 1.0 0.5 m ) 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11869 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11870 No.A0583-3/4 2SA2202 Outline Drawing 2SA2202-TD-E Land Pattern Example Mass (g) Unit 0.058 mm * For reference Unit: mm 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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