Ordering number : ENA0411A 2SC6095 Bipolar Transistor 80V, 2.5A, Low VCE(sat), NPN Single PCP http://onsemi.com Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter • Features Adoption of FBET, MBIT process Low collector-to-emitter saturation voltage High allowable power dissipation • • • • • Large current capacity High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCES Unit 120 V 120 V VCEO 80 V 6.5 V Collector Current VEBO IC 2.5 A Collector Current (Pulse) ICP 4 A Collector-to-Emitter Voltage Emitter-to-Base Voltage Continued on next page. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel 1.6 2.5 1.0 1 2 Packing Type: TD 4.0 1.5 TD Marking LOT No. 2SC6095-TD-E 4.5 QF Top View 3 0.4 0.4 0.5 1.5 3.0 Electrical Connection 2 0.75 1 1 : Base 2 : Collector 3 : Emitter Bottom View 3 PCP Semiconductor Components Industries, LLC, 2013 September, 2013 90512 TKIM/53006EA MSIM TB-00002345 No. A0411-1/7 2SC6095 Continued from preceding page. Parameter Symbol Base Current Conditions Ratings IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Unit 500 mA When mounted on ceramic substrate (250mm2×0.8mm) 1.3 W Tc=25°C 3.5 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Ratings min typ VCE=5V, IC=100mA 300 VCE=10V, IC=500mA VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO Unit max VCB=70V, IE=0A VEB=4V, IC=0A fT Cob Output Capacitance Conditions 1 μA 1 μA 600 350 VCB=10V, f=1MHz IC=1A, IB=50mA MHz 14 IC=1A, IB=100mA IC=1A, IB=100mA IC=10μA, IE=0A pF 100 150 mV 90 135 mV 0.9 1.2 V 120 V IC=100μA, RBE=0Ω IC=1mA, RBE=∞ 120 V 80 V V(BR)EBO ton IE=10μA, IC=0A 6.5 tstg tf See specified Test Circuit. V(BR)CES V(BR)CEO V 40 ns 920 ns 32 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR10 RB 50Ω RL + 100μF VBE= --5V + 470μF VCC=40V IC=10IB1= --10IB2=0.5A Ordering Information Device 2SC6095-TD-E Package Shipping memo PCP 1,000pcs./reel Pb Free No. A0411-2/7 2SC6095 IC -- VCE 2mA 1mA 0.4 0 0.2 0.4 0.6 0.8 0 2 100 7 5 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A 3 1.0 VCE=10V 3 2 100 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 IC / IB=10 f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 3 2 10 7 5 3 IT11073 VCE(sat) -- IC 5 5 2 Collector Current, IC -- A IT11072 7 1.2 IT11071 5 10 0.01 5 Cob -- VCB 100 0.8 7 Gain-Bandwidth Product, f T -- MHz --25°C 3 0.6 f T -- IC 1000 Ta=75°C 25°C 5 0.4 Base-to-Emitter Voltage, VBE -- V VCE=5V 7 0.2 IT11070 hFE -- IC 1000 3 0.01 0 1.0 Collector-to-Emitter Voltage, VCE -- V DC Current Gain, hFE 0.5 IB=0mA 0 1.0 --25°C 5mA 0.8 1.5 C 10mA 2.0 25°C 20mA Collector Current, IC -- A 1.2 VCE=5V A Ta=75 ° A 80mA 60mA 1.6 40m IC -- VBE 2.5 100m Collector Current, IC -- A 2.0 3 2 0.1 7 5 °C 75 = Ta 3 2 C 5° --2 °C 25 0.01 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 3 0.01 5 7 100 IT11074 Collector-to-Base Voltage, VCB -- V 3 5 7 0.1 2 3 5 7 1.0 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 0.1 7 °C 75 C 5° --2 3 2 5 IC / IB=10 IC / IB=20 = Ta 3 IT11075 VBE(sat) -- IC 3 3 5 2 Collector Current, IC -- A VCE(sat) -- IC 5 2 °C 25 2 1.0 Ta= --25°C 7 75°C 25°C 5 3 0.01 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT11076 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT11077 No. A0411-3/7 2SC6095 ASO Collector Current, IC -- A 10 DC 50 m 0μ D s 1 m Op M CO s ou pe e r nt ra a t ed tio io n( on n ( Tc a c Ta= =2 er 25 5° am °C C) ic ) bo ar d( 25 0m m2 ✕0 1.0 7 5 3 2 0.1 7 5 3 2 <10μs Tc=25°C Single Pulse 0.01 0.1 2 3 s 0μ 10 IC=2.5A 3 2 PC -- Ta 1.4 100ms ICP=4A s .8m 1.3 1.2 Collector Dissipation, PC -- W 7 5 M ou nt ed 1.0 on ac er 0.8 am ic bo ar d 0.6 (2 50 m m2 ✕ 0.4 0. 0.2 m 8m m ) ) 0 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT11078 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11079 PC -- Tc 4.0 Collector Dissipation, PC -- W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11080 No. A0411-4/7 2SC6095 Embossed Taping Specification 2SC6095-TD-E No. A0411-5/7 2SC6095 Outline Drawing 2SC6095-TD-E Land Pattern Example Mass (g) Unit 0.058 mm * For reference Unit: mm 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 No. A0411-6/7 2SC6095 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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