Ordering number : EN5810A CPH6102 Bipolar Transisitor –50V, –1A, Low VCE(sat) PNP Single CPH6 http://onsemi.com Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes Features • • • • • • Adoption of FBET, MBIT processes Large current capacity Low collector to emitter saturation voltage High-speed switching Ultrasmall package permitting applied sets to be made small and slim (0.9mm) High allowable power dissipation Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Conditions Ratings VCBO VCEO Collector to Emitter Voltage Emitter to Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg When mounted on ceramic substrate (600mm2×0.8mm) Unit --60 V --50 V --5 V --1.0 A --2 A 1.3 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7018A-002 • Package : CPH6 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs./reel 4 Packing Type: TL Marking 0.9 1 2 0.95 LOT No. AB 0.05 1.6 0.2 0.6 2.8 0.2 0.6 5 CPH6102-TL-E 0.15 2.9 6 TL 3 0.4 1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector Electrical Connection 1, 2, 5, 6 3 CPH6 4 Semiconductor Components Industries, LLC, 2013 November, 2013 N1313 TKIM TC-00002831/D1099TS (KOTO) TA-1949 No.5810-1/4 CPH6102 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE1 VCB= --50V, IE=0A VEB= --4V, IC=0A VCE= --2V, IC= --100mA hFE2 VCE= --2V, IC= --1A VCE= --10V, IC= --50mA fT Cob Output Capacitance Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Emitter to Base Breakdown Voltage Turn-ON Time Storage Time Fall Time typ max 200 Unit --100 nA --100 nA 560 30 150 MHz 12 IC= --500mA, IB= --50mA IC= --10μA, IE=0A IC= --1mA, RBE=∞ V(BR)CBO V(BR)CEO Collector to Emitter Breakdown Voltage min VCB= --10V, f=1MHz IC= --500mA, IB= --50mA VCE(sat) VBE(sat) Collector to Base Breakdown Voltage Ratings Conditions V(BR)EBO ton IE= --10μA, IC=0A tstg tf See specified Test Circuit. pF --180 --500 --0.9 --1.2 mV V --60 V --50 V --5 V 40 ns 300 ns 30 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 RB VR RL 50Ω + + 100μF 470μF VBE=5V VCC= --25V IC=10IB1= --10IB2= --500mA Ordering Information Device CPH6102-TL-E Shipping memo CPH6 3,000pcs./reel Pb Free IC -- VCE mA --10 --0.8 VCE= --2V --8mA --1000 --6mA --4mA --0.6 --2mA --0.4 --1mA --0.2 --800 --600 --400 Ta=7 5°C 25°C --25°C A 2m --1 IC -- VBE --1200 Collector Current, IC -- mA --1.0 Collector Current, IC -- A Package --200 IB=0mA 0 0 --1 --2 --3 --4 Collector to Emitter Voltage, VCE -- V 0 --5 IT16938 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base to Emitter Voltage, VBE -- V --1.2 IT16939 No.5810-2/4 CPH6102 hFE -- IC 1000 5 Ta=75°C DC Current Gain, hFE 3 VCE= --10V Gain-Bandwidth Product, f T -- MHz 7 25°C 2 --25°C 100 7 5 3 2 10 f T -- IC 5 VCE= --2V 7 5 3 2 100 7 5 3 2 10 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 Collector Current, IC -- mA 2 5 3 7 2 --10 Cob -- VCB 5 3 5 7 --100 2 3 Collector Current, IC -- mA IT16940 5 IT16941 VCE(sat) -- IC IC / IB=10 f=1MHz Collector to Emitter Saturation Voltage, VCE(sat) -- mV Output Capacitance, Cob -- pF --1000 3 2 10 7 5 2 3 2 °C 25 C 75° Ta= 7 5 5°C --2 3 2 --10 5 7 --1.0 2 3 5 7 --10 2 3 5 Collector to Base Voltage, VCB -- V 7 --100 IT16942 5 Collector Current, IC -- A 25°C 75°C 7 2 3 5 7 --100 2 3 5 Collector Current, IC -- mA 7 --1000 2 IT16944 PC -- Ta 1.4 C 3 2 5 7 --1000 2 IT16943 op er at io n. --0.1 7 2 5 7 --10 10 10 ms 0m s D 5 3 0 3 10μs IC= --1A --1.0 5 3 2 μs 100 2 7 --100 s 1m 3 5 5 ASO 5 7 3 ICP= --2A 2 7 Ta= --25°C 2 3 IC / IB=10 --1.0 7 --10 Collector Current, IC -- mA VBE(sat) -- IC --10 Base to Emitter Saturation Voltage, VBE(sat) -- mV 5 --100 3 Collector Dissipation, PC -- W 7 Ta=25°C Single pulse When mounted on ceramic substrate (600mm2×0.8mm) 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector to Emitter Voltage, VCE -- V 5 7 IT16945 When mounted on ceramic substrate (600mm2×0.8mm) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16946 No.5810-3/4 CPH6102 Outline Drawing CPH6102-TL-E Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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