Ordering number : ENA2219 NGTG12N60TF1G N-Channel IGBT http://onsemi.com 600V, 12A, VCE(sat);1.4V TO-3PF-3L Features • VCE(sat)=1.4V typ. (IC=12A, VGE=15V) • Low switching loss in higher frequency applications • Enhansment type • 5μs short circuit capability • Adoption of full isolation type package TO-3PF-3L Applications • Power factor correction of white goods appliance • General purpose inverter Specifications Absolute Maximum Ratings at Ta = 25°C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector to Emitter Voltage VCES 600 V Gate to Emitter Voltage VGES ±20 V Collector Current (DC) Collector Current (Pulse) @ Tc=25°C * IC*1 Limited by Tjmax ICP Pulse width Limited by Tjmax(Ref:ASO graph) Allowable Power Dissipation PD Junction Temperature Tj Storage Temperature Tstg Note : * 2 @ Tc=100°C *2 Tc=25°C (Our ideal heat dissipation condition) * 2 24 A 12 A 88 A 54 W 150 °C - 55 to +150 °C 1 Collector Current is calculated from the following formula. Tjmax - Tc IC(Tc)= Rth(j-c)×VCE(sat)max.(Tjmax, IC(Tc)) *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta = 25°C, Unless otherwise specified Ratings Parameter Symbol Conditions Unit min Collector to Emitter Breakdown Voltage Collector to Emitter Cut off Current V(BR)CES ICES IC=500μA, VGE=0V VCE=600V, VGE=0V Gate to Emitter Leakage Current IGES VGE=±20V, VCE =0V Gate to Emitter Threshold Voltage VGE(th) VCE =20V, IC=250μA VCE (sat) Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres VGE=15V, IC=12A VCE =20V,f=1MHz max 600 V Tc=25°C 10 μA Tc=125°C 1 mA ±100 nA 4.5 Tc=25°C Collector to Emitter Saturation Voltage typ Tc=125°C 1.4 6.5 V 1.6 V 1.6 V 2000 pF 60 pF 50 pF Continued on next page. ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2013 October, 2013 O0213 TKIM TC-00003040 No.A2219-1/7 NGTG12N60TF1G Continued from preceding page. Ratings Parameter Symbol Conditions Unit min Turn-ON Delay Time typ max 55 td(on) ns Rise Time tr Turn-ON Time ton VCC=300V,IC=15A RG=30Ω,L=200μH Turn-OFF Delay Time td(off) Fall Time tf Turn-OFF Time toff 350 ns Total Gate Charge Qg 84 nC Gate to Emitter Charge Qge 16 nC Gate to Collector “Miller” Charge Qgc 37 nC 30 ns 330 ns VGE=0V/15V Vclamp=400V 200 ns See Fig.1, See Fig.2 110 ns VCE =300V, VGE=15V, IC=15A Thermal Characteristics at Ta = 25°C, Unless otherwise specified Parameter Symbol Thermal Resistance (junction- Case) Rth(j-c) Thermal Resistance (junction- atmosphere) Rth(j-a) Conditions Tc=25°C (our ideal heat dissipation condition)*2 Ratings Unit 2.33 °C /W 47.5 °C /W No.A2219-2/7 NGTG12N60TF1G No.A2219-3/7 NGTG12N60TF1G No.A2219-4/7 NGTG12N60TF1G No.A2219-5/7 NGTG12N60TF1G Package Dimensions NGTG12N60TF1G TO-3PF-3L CASE 340AH ISSUE O Unit : mm 1: Gate 2: Collector 3: Emitter Electrical Connection 2 1 3 No.A2219-6/7 NGTG12N60TF1G Ordering & Package Information Marking Device Package Shipping note NGTG12N60TF1G TO-3PF-3L SC-94 30 pcs. / tube Pb-Free GTG12N 60 LOT No. Fig.1 Switching Time Test Circuit Fig.2 Timing Chart Clamp Di VGE 90% 10% 0 200mH DUT IC 90% 90% VCC RG 0 NGTG12N60TF1G VCE 10% 10% tf td(off) toff 10% 10% tr td(on) ton IT16383 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.A2219-7/7