NGTG12N60TF1G - ON Semiconductor

Ordering number : ENA2219
NGTG12N60TF1G
N-Channel IGBT
http://onsemi.com
600V, 12A, VCE(sat);1.4V TO-3PF-3L
Features
• VCE(sat)=1.4V typ. (IC=12A, VGE=15V)
• Low switching loss in higher frequency applications
• Enhansment type
• 5μs short circuit capability
• Adoption of full isolation type package
TO-3PF-3L
Applications
• Power factor correction of white goods appliance
• General purpose inverter
Specifications
Absolute Maximum Ratings at Ta = 25°C, Unless otherwise specified
Parameter
Symbol
Conditions
Ratings
Unit
Collector to Emitter Voltage
VCES
600
V
Gate to Emitter Voltage
VGES
±20
V
Collector Current (DC)
Collector Current (Pulse)
@ Tc=25°C *
IC*1
Limited by Tjmax
ICP
Pulse width Limited by Tjmax(Ref:ASO graph)
Allowable Power Dissipation
PD
Junction Temperature
Tj
Storage Temperature
Tstg
Note : *
2
@ Tc=100°C *2
Tc=25°C (Our ideal heat dissipation condition) *
2
24
A
12
A
88
A
54
W
150
°C
- 55 to +150
°C
1
Collector Current is calculated from the following formula.
Tjmax - Tc
IC(Tc)=
Rth(j-c)×VCE(sat)max.(Tjmax, IC(Tc))
*2 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta = 25°C, Unless otherwise specified
Ratings
Parameter
Symbol
Conditions
Unit
min
Collector to Emitter Breakdown Voltage
Collector to Emitter Cut off Current
V(BR)CES
ICES
IC=500μA, VGE=0V
VCE=600V, VGE=0V
Gate to Emitter Leakage Current
IGES
VGE=±20V, VCE =0V
Gate to Emitter Threshold Voltage
VGE(th)
VCE =20V, IC=250μA
VCE (sat)
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
VGE=15V, IC=12A
VCE =20V,f=1MHz
max
600
V
Tc=25°C
10
μA
Tc=125°C
1
mA
±100
nA
4.5
Tc=25°C
Collector to Emitter Saturation Voltage
typ
Tc=125°C
1.4
6.5
V
1.6
V
1.6
V
2000
pF
60
pF
50
pF
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
Semiconductor Components Industries, LLC, 2013
October, 2013
O0213 TKIM TC-00003040 No.A2219-1/7
NGTG12N60TF1G
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
Unit
min
Turn-ON Delay Time
typ
max
55
td(on)
ns
Rise Time
tr
Turn-ON Time
ton
VCC=300V,IC=15A
RG=30Ω,L=200μH
Turn-OFF Delay Time
td(off)
Fall Time
tf
Turn-OFF Time
toff
350
ns
Total Gate Charge
Qg
84
nC
Gate to Emitter Charge
Qge
16
nC
Gate to Collector “Miller” Charge
Qgc
37
nC
30
ns
330
ns
VGE=0V/15V
Vclamp=400V
200
ns
See Fig.1, See Fig.2
110
ns
VCE =300V, VGE=15V, IC=15A
Thermal Characteristics at Ta = 25°C, Unless otherwise specified
Parameter
Symbol
Thermal Resistance (junction- Case)
Rth(j-c)
Thermal Resistance (junction- atmosphere)
Rth(j-a)
Conditions
Tc=25°C (our ideal heat dissipation condition)*2
Ratings
Unit
2.33
°C /W
47.5
°C /W
No.A2219-2/7
NGTG12N60TF1G
No.A2219-3/7
NGTG12N60TF1G
No.A2219-4/7
NGTG12N60TF1G
No.A2219-5/7
NGTG12N60TF1G
Package Dimensions
NGTG12N60TF1G
TO-3PF-3L
CASE 340AH
ISSUE O
Unit : mm
1: Gate
2: Collector
3: Emitter
Electrical Connection
2
1
3
No.A2219-6/7
NGTG12N60TF1G
Ordering & Package Information
Marking
Device
Package
Shipping
note
NGTG12N60TF1G
TO-3PF-3L
SC-94
30
pcs. / tube
Pb-Free
GTG12N
60 LOT No.
Fig.1 Switching Time Test Circuit
Fig.2 Timing Chart
Clamp Di
VGE
90%
10%
0
200mH
DUT
IC
90%
90%
VCC
RG
0
NGTG12N60TF1G
VCE
10%
10%
tf
td(off)
toff
10%
10%
tr
td(on)
ton
IT16383
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PS No.A2219-7/7